Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching
The process of chemical polishing the undoped and doped ZnSe crystals surface with H₂O₂ – HBr etchants has been studied. The dependence of the samples polishing rate on the concentration of H₂O₂ in HBr solution has been investigated. Surface states after chemical etching have been established usi...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2013 |
| Main Authors: | Tomashyk, V.M., Kravtsova, A.S., Tomashyk, Z.F., Stratiychuk, I.B., Galkin, S.M. |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117683 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching / V.М. Tomashyk, А.S. Kravtsova, Z.F. Tomashyk, І.B. Stratiychuk, S.М. Galkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 140-145. — Бібліогр.: 15 назв. — англ. |
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