Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2013
• Автори: Tomashyk, V.M., Kravtsova, A.S., Tomashyk, Z.F., Stratiychuk, I.B., Galkin, S.M.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/117683
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching / V.М. Tomashyk, А.S. Kravtsova, Z.F. Tomashyk, І.B. Stratiychuk, S.М. Galkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 140-145. — Бібліогр.: 15 назв. — англ.

The process of chemical polishing the undoped and doped ZnSe crystals surface with H₂O₂ – HBr etchants has been studied. The dependence of the samples polishing rate on the concentration of H₂O₂ in HBr solution has been investigated. Surface states after chemical etching have been established usi...