Temperature changes of the exciton transition energy in lead di-iodide nanofilms

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2013
• Автори: Pugantseva, O.V., Kramar, V.M., Fesiv, I.V., Kudryavtsev, O.O.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/117684
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Temperature changes of the exciton transition energy in lead di-iodide nanofilms / O.V. Pugantseva, V.M. Kramar, I.V. Fesiv, O.O. Kudryavtsev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 170-176. — Бібліогр.: 29 назв. — англ.

Adduced in this work are the results of theoretical investigations devoted to the influence of spatial confinement effects, self-polarization of heterojunction planes and exciton-phonon interaction on values of the exciton transition energy in lead diiodide nanofilms placed into dielectric ambience (glass or polymer). The heterojunction is considered to be unloaded, nanosystem is modeled with an infinite deep quantum well and characterized by an essential difference between dielectric permeabilities in both sides of the heterojunction. Calculated in the work are dependences of the exciton energy on the nanofilm thickness and temperature. The results of calculations are in accordance with the known data of experimental measurements.