Temperature changes of the exciton transition energy in lead di-iodide nanofilms

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2013
• Автори: Pugantseva, O.V., Kramar, V.M., Fesiv, I.V., Kudryavtsev, O.O.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/117684
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Temperature changes of the exciton transition energy
 in lead di-iodide nanofilms / O.V. Pugantseva, V.M. Kramar, I.V. Fesiv, O.O. Kudryavtsev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 170-176. — Бібліогр.: 29 назв. — англ.

Adduced in this work are the results of theoretical investigations devoted to
 the influence of spatial confinement effects, self-polarization of heterojunction planes
 and exciton-phonon interaction on values of the exciton transition energy in lead diiodide
 nanofilms placed into dielectric ambience (glass or polymer). The heterojunction
 is considered to be unloaded, nanosystem is modeled with an infinite deep quantum well
 and characterized by an essential difference between dielectric permeabilities in both
 sides of the heterojunction. Calculated in the work are dependences of the exciton energy
 on the nanofilm thickness and temperature. The results of calculations are in accordance
 with the known data of experimental measurements.