Electron mobility in the GaAs/InGaAs/GaAs quantum wells

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2013
• Main Authors: Vainberg, V.V., Pylypchuk, A.S., Baidus, N.V., Zvonkov, B.N.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117687
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Electron mobility in the GaAs/InGaAs/GaAs quantum wells / V.V. Vainberg, A.S. Pylypchuk, N.V. Baidus and B.N. Zvonkov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 152-161. — Бібліогр.: 16 назв. — англ.

The temperature dependence of the electron lateral mobility in quantum wells
 of the GaAs/InGaAs/GaAs heterostructures with delta-like doping has been studied. Two
 types of sample doping – in the quantum well and in the adjacent barrier at a small
 distance from the well – were used. In the case of shallow wells, in such structures the
 experimental results may be well described by known electron scattering mechanisms
 taking into account the shape of real envelope wave functions and band bending due to
 non-uniform distribution of the positive and negative space charges along the growth
 direction of heterostructure layers. In the case of delta-like doping in the well, a good
 agreement between experiment and calculations is achieved, if one takes into account a
 contribution to electron transport of the states of the impurity band formed by the deltaimpurity beneath the bottom of the lowest quantum subband.