Electron mobility in the GaAs/InGaAs/GaAs quantum wells
The temperature dependence of the electron lateral mobility in quantum wells of the GaAs/InGaAs/GaAs heterostructures with delta-like doping has been studied. Two types of sample doping – in the quantum well and in the adjacent barrier at a small distance from the well – were used. In the case of...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2013 |
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| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117687 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Electron mobility in the GaAs/InGaAs/GaAs quantum wells / V.V. Vainberg, A.S. Pylypchuk, N.V. Baidus and B.N. Zvonkov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 152-161. — Бібліогр.: 16 назв. — англ. |
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Vainberg, V.V. Pylypchuk, A.S. Baidus, N.V. Zvonkov, B.N. 2017-05-26T09:40:44Z 2017-05-26T09:40:44Z 2013 Electron mobility in the GaAs/InGaAs/GaAs quantum wells / V.V. Vainberg, A.S. Pylypchuk, N.V. Baidus and B.N. Zvonkov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 152-161. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS 72.20.Fr, 72.80.Ey, 73.20.At, 73.21.Fg, 73.63.Hs, 81.07.St https://nasplib.isofts.kiev.ua/handle/123456789/117687 The temperature dependence of the electron lateral mobility in quantum wells of the GaAs/InGaAs/GaAs heterostructures with delta-like doping has been studied. Two types of sample doping – in the quantum well and in the adjacent barrier at a small distance from the well – were used. In the case of shallow wells, in such structures the experimental results may be well described by known electron scattering mechanisms taking into account the shape of real envelope wave functions and band bending due to non-uniform distribution of the positive and negative space charges along the growth direction of heterostructure layers. In the case of delta-like doping in the well, a good agreement between experiment and calculations is achieved, if one takes into account a contribution to electron transport of the states of the impurity band formed by the deltaimpurity beneath the bottom of the lowest quantum subband. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Electron mobility in the GaAs/InGaAs/GaAs quantum wells Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Electron mobility in the GaAs/InGaAs/GaAs quantum wells |
| spellingShingle |
Electron mobility in the GaAs/InGaAs/GaAs quantum wells Vainberg, V.V. Pylypchuk, A.S. Baidus, N.V. Zvonkov, B.N. |
| title_short |
Electron mobility in the GaAs/InGaAs/GaAs quantum wells |
| title_full |
Electron mobility in the GaAs/InGaAs/GaAs quantum wells |
| title_fullStr |
Electron mobility in the GaAs/InGaAs/GaAs quantum wells |
| title_full_unstemmed |
Electron mobility in the GaAs/InGaAs/GaAs quantum wells |
| title_sort |
electron mobility in the gaas/ingaas/gaas quantum wells |
| author |
Vainberg, V.V. Pylypchuk, A.S. Baidus, N.V. Zvonkov, B.N. |
| author_facet |
Vainberg, V.V. Pylypchuk, A.S. Baidus, N.V. Zvonkov, B.N. |
| publishDate |
2013 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The temperature dependence of the electron lateral mobility in quantum wells
of the GaAs/InGaAs/GaAs heterostructures with delta-like doping has been studied. Two
types of sample doping – in the quantum well and in the adjacent barrier at a small
distance from the well – were used. In the case of shallow wells, in such structures the
experimental results may be well described by known electron scattering mechanisms
taking into account the shape of real envelope wave functions and band bending due to
non-uniform distribution of the positive and negative space charges along the growth
direction of heterostructure layers. In the case of delta-like doping in the well, a good
agreement between experiment and calculations is achieved, if one takes into account a
contribution to electron transport of the states of the impurity band formed by the deltaimpurity beneath the bottom of the lowest quantum subband.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117687 |
| citation_txt |
Electron mobility in the GaAs/InGaAs/GaAs quantum wells / V.V. Vainberg, A.S. Pylypchuk, N.V. Baidus and B.N. Zvonkov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 152-161. — Бібліогр.: 16 назв. — англ. |
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| first_indexed |
2025-11-28T17:21:26Z |
| last_indexed |
2025-11-28T17:21:26Z |
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