Low-temperature deposition of silicon dioxide films in high-density plasma
One of the basic operations in the LED (light-emitting diode) chip fabrication
 technique is formation of dielectric coatings for the purpose of insulation and surface
 passivation of the LED structure. Oxides and nitrides of silicon obtained by physical or
 chemical vapor de...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2013 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117696 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Low-temperature deposition of silicon dioxide films
 in high-density plasma / A. Yasunas, D. Kotov, V. Shiripov, U. Radzionay // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 216-219. — Бібліогр.: 2 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862614366224908288 |
|---|---|
| author | Yasunas, A. Kotov, D. Shiripov, V. Radzionay, U. |
| author_facet | Yasunas, A. Kotov, D. Shiripov, V. Radzionay, U. |
| citation_txt | Low-temperature deposition of silicon dioxide films
 in high-density plasma / A. Yasunas, D. Kotov, V. Shiripov, U. Radzionay // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 216-219. — Бібліогр.: 2 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | One of the basic operations in the LED (light-emitting diode) chip fabrication
technique is formation of dielectric coatings for the purpose of insulation and surface
passivation of the LED structure. Oxides and nitrides of silicon obtained by physical or
chemical vapor deposition techniques can act as such a coating. Low conformity of
physical vapor deposition techniques limits the possibility of their application in a
number of cases at LED mesostructures passivation. This work represents the results of
experiments on silicon dioxide dielectric films deposition in the inductive coupled
plasma under different operation conditions. The findings prove the possibility of lowtemperature
deposition of thick silicon dioxide films with high conformality by the
HDPCVD (high-density plasma chemical vapor deposition) technique.
|
| first_indexed | 2025-11-29T10:35:24Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117696 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-29T10:35:24Z |
| publishDate | 2013 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Yasunas, A. Kotov, D. Shiripov, V. Radzionay, U. 2017-05-26T10:11:01Z 2017-05-26T10:11:01Z 2013 Low-temperature deposition of silicon dioxide films
 in high-density plasma / A. Yasunas, D. Kotov, V. Shiripov, U. Radzionay // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 216-219. — Бібліогр.: 2 назв. — англ. 1560-8034 PACS 78.20.-e, 82.33.Xj https://nasplib.isofts.kiev.ua/handle/123456789/117696 One of the basic operations in the LED (light-emitting diode) chip fabrication
 technique is formation of dielectric coatings for the purpose of insulation and surface
 passivation of the LED structure. Oxides and nitrides of silicon obtained by physical or
 chemical vapor deposition techniques can act as such a coating. Low conformity of
 physical vapor deposition techniques limits the possibility of their application in a
 number of cases at LED mesostructures passivation. This work represents the results of
 experiments on silicon dioxide dielectric films deposition in the inductive coupled
 plasma under different operation conditions. The findings prove the possibility of lowtemperature
 deposition of thick silicon dioxide films with high conformality by the
 HDPCVD (high-density plasma chemical vapor deposition) technique. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Low-temperature deposition of silicon dioxide films in high-density plasma Article published earlier |
| spellingShingle | Low-temperature deposition of silicon dioxide films in high-density plasma Yasunas, A. Kotov, D. Shiripov, V. Radzionay, U. |
| title | Low-temperature deposition of silicon dioxide films in high-density plasma |
| title_full | Low-temperature deposition of silicon dioxide films in high-density plasma |
| title_fullStr | Low-temperature deposition of silicon dioxide films in high-density plasma |
| title_full_unstemmed | Low-temperature deposition of silicon dioxide films in high-density plasma |
| title_short | Low-temperature deposition of silicon dioxide films in high-density plasma |
| title_sort | low-temperature deposition of silicon dioxide films in high-density plasma |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117696 |
| work_keys_str_mv | AT yasunasa lowtemperaturedepositionofsilicondioxidefilmsinhighdensityplasma AT kotovd lowtemperaturedepositionofsilicondioxidefilmsinhighdensityplasma AT shiripovv lowtemperaturedepositionofsilicondioxidefilmsinhighdensityplasma AT radzionayu lowtemperaturedepositionofsilicondioxidefilmsinhighdensityplasma |