Low-temperature deposition of silicon dioxide films in high-density plasma

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2013
• Main Authors: Yasunas, A., Kotov, D., Shiripov, V., Radzionay, U.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117696
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Low-temperature deposition of silicon dioxide films
 in high-density plasma / A. Yasunas, D. Kotov, V. Shiripov, U. Radzionay // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 216-219. — Бібліогр.: 2 назв. — англ.

One of the basic operations in the LED (light-emitting diode) chip fabrication
 technique is formation of dielectric coatings for the purpose of insulation and surface
 passivation of the LED structure. Oxides and nitrides of silicon obtained by physical or
 chemical vapor de...