The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2010
• ISSN: 1560-8034
• Hauptverfasser: Belyaev, A.E., Boltovets, N.S., Kapitanchuk, L.M., Konakova, R.V., Kladko, V.P., Kudryk, Ya.Ya., Kuchuk, A.V., Lytvyn, O.S., Milenin, V.V., Korostinskaya, T.V., Ataubaeva, A.B., Nevolin, P.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117698
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts /A.E. Belyaev, N.S. Boltovets, L.M. Kapitanchuk, R.V. Konakova, V.P. Kladko, Ya.Ya. Kudryk, A.V. Kuchuk, O.S. Lytvyn, V.V. Milenin, T.V. Korostinskaya, A.B. Ataubaeva, P.V. Nevolin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 8-11. — Бібліогр.: 14 назв. — англ.

We consider the features of formation of Au-Ti-Pd ohmic contacts to p⁺₋Si.
 Metallization was made by vacuum thermal sputtering of Pd, Ti and Au films onto the Si
 substrate heated up to 330 °С. It is shown that the contact resistivity increases with
 temperature; this is typical of metallic conductivity. We suggest that the ohmic contact is
 formed owing to appearance of shunts at Pd deposition on dislocations or other structural
 defects. The number of shunts per unit area is close to the measured density of structural
 defects at the metal-Si interface.