The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts
We consider the features of formation of Au-Ti-Pd ohmic contacts to p⁺₋Si.
 Metallization was made by vacuum thermal sputtering of Pd, Ti and Au films onto the Si
 substrate heated up to 330 °С. It is shown that the contact resistivity increases with
 temperature; this is typ...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2010 |
| Автори: | , , , , , , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117698 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts /A.E. Belyaev, N.S. Boltovets, L.M. Kapitanchuk, R.V. Konakova, V.P. Kladko, Ya.Ya. Kudryk, A.V. Kuchuk, O.S. Lytvyn, V.V. Milenin, T.V. Korostinskaya, A.B. Ataubaeva, P.V. Nevolin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 8-11. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862651668669136896 |
|---|---|
| author | Belyaev, A.E. Boltovets, N.S. Kapitanchuk, L.M. Konakova, R.V. Kladko, V.P. Kudryk, Ya.Ya. Kuchuk, A.V. Lytvyn, O.S. Milenin, V.V. Korostinskaya, T.V. Ataubaeva, A.B. Nevolin, P.V. |
| author_facet | Belyaev, A.E. Boltovets, N.S. Kapitanchuk, L.M. Konakova, R.V. Kladko, V.P. Kudryk, Ya.Ya. Kuchuk, A.V. Lytvyn, O.S. Milenin, V.V. Korostinskaya, T.V. Ataubaeva, A.B. Nevolin, P.V. |
| citation_txt | The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts /A.E. Belyaev, N.S. Boltovets, L.M. Kapitanchuk, R.V. Konakova, V.P. Kladko, Ya.Ya. Kudryk, A.V. Kuchuk, O.S. Lytvyn, V.V. Milenin, T.V. Korostinskaya, A.B. Ataubaeva, P.V. Nevolin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 8-11. — Бібліогр.: 14 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We consider the features of formation of Au-Ti-Pd ohmic contacts to p⁺₋Si.
Metallization was made by vacuum thermal sputtering of Pd, Ti and Au films onto the Si
substrate heated up to 330 °С. It is shown that the contact resistivity increases with
temperature; this is typical of metallic conductivity. We suggest that the ohmic contact is
formed owing to appearance of shunts at Pd deposition on dislocations or other structural
defects. The number of shunts per unit area is close to the measured density of structural
defects at the metal-Si interface.
|
| first_indexed | 2025-12-01T20:33:57Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117698 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-01T20:33:57Z |
| publishDate | 2010 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Belyaev, A.E. Boltovets, N.S. Kapitanchuk, L.M. Konakova, R.V. Kladko, V.P. Kudryk, Ya.Ya. Kuchuk, A.V. Lytvyn, O.S. Milenin, V.V. Korostinskaya, T.V. Ataubaeva, A.B. Nevolin, P.V. 2017-05-26T12:07:14Z 2017-05-26T12:07:14Z 2010 The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts /A.E. Belyaev, N.S. Boltovets, L.M. Kapitanchuk, R.V. Konakova, V.P. Kladko, Ya.Ya. Kudryk, A.V. Kuchuk, O.S. Lytvyn, V.V. Milenin, T.V. Korostinskaya, A.B. Ataubaeva, P.V. Nevolin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 8-11. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 85.30.De https://nasplib.isofts.kiev.ua/handle/123456789/117698 We consider the features of formation of Au-Ti-Pd ohmic contacts to p⁺₋Si.
 Metallization was made by vacuum thermal sputtering of Pd, Ti and Au films onto the Si
 substrate heated up to 330 °С. It is shown that the contact resistivity increases with
 temperature; this is typical of metallic conductivity. We suggest that the ohmic contact is
 formed owing to appearance of shunts at Pd deposition on dislocations or other structural
 defects. The number of shunts per unit area is close to the measured density of structural
 defects at the metal-Si interface. This work was supported by the Government Goaloriented
 Scientific and Technical Program “The development and acquisition of microelectronic
 technologies, organization of serial production of devices and systems with them” 2008-2011. Decree of the Cabinet of Ministers of Ukraine No 1335 from November 21, 2007. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts Article published earlier |
| spellingShingle | The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts Belyaev, A.E. Boltovets, N.S. Kapitanchuk, L.M. Konakova, R.V. Kladko, V.P. Kudryk, Ya.Ya. Kuchuk, A.V. Lytvyn, O.S. Milenin, V.V. Korostinskaya, T.V. Ataubaeva, A.B. Nevolin, P.V. |
| title | The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts |
| title_full | The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts |
| title_fullStr | The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts |
| title_full_unstemmed | The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts |
| title_short | The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts |
| title_sort | features of temperature dependence of contact resistivity of au-ti-pd₂si-p⁺ ₋si ohmic contacts |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117698 |
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