The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts

We consider the features of formation of Au-Ti-Pd ohmic contacts to p⁺₋Si. Metallization was made by vacuum thermal sputtering of Pd, Ti and Au films onto the Si substrate heated up to 330 °С. It is shown that the contact resistivity increases with temperature; this is typical of metallic conduct...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2010
Main Authors: Belyaev, A.E., Boltovets, N.S., Kapitanchuk, L.M., Konakova, R.V., Kladko, V.P., Kudryk, Ya.Ya., Kuchuk, A.V., Lytvyn, O.S., Milenin, V.V., Korostinskaya, T.V., Ataubaeva, A.B., Nevolin, P.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/117698
Tags: Add Tag
No Tags, Be the first to tag this record!
Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts /A.E. Belyaev, N.S. Boltovets, L.M. Kapitanchuk, R.V. Konakova, V.P. Kladko, Ya.Ya. Kudryk, A.V. Kuchuk, O.S. Lytvyn, V.V. Milenin, T.V. Korostinskaya, A.B. Ataubaeva, P.V. Nevolin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 8-11. — Бібліогр.: 14 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-117698
record_format dspace
spelling Belyaev, A.E.
Boltovets, N.S.
Kapitanchuk, L.M.
Konakova, R.V.
Kladko, V.P.
Kudryk, Ya.Ya.
Kuchuk, A.V.
Lytvyn, O.S.
Milenin, V.V.
Korostinskaya, T.V.
Ataubaeva, A.B.
Nevolin, P.V.
2017-05-26T12:07:14Z
2017-05-26T12:07:14Z
2010
The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts /A.E. Belyaev, N.S. Boltovets, L.M. Kapitanchuk, R.V. Konakova, V.P. Kladko, Ya.Ya. Kudryk, A.V. Kuchuk, O.S. Lytvyn, V.V. Milenin, T.V. Korostinskaya, A.B. Ataubaeva, P.V. Nevolin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 8-11. — Бібліогр.: 14 назв. — англ.
1560-8034
PACS 85.30.De
https://nasplib.isofts.kiev.ua/handle/123456789/117698
We consider the features of formation of Au-Ti-Pd ohmic contacts to p⁺₋Si. Metallization was made by vacuum thermal sputtering of Pd, Ti and Au films onto the Si substrate heated up to 330 °С. It is shown that the contact resistivity increases with temperature; this is typical of metallic conductivity. We suggest that the ohmic contact is formed owing to appearance of shunts at Pd deposition on dislocations or other structural defects. The number of shunts per unit area is close to the measured density of structural defects at the metal-Si interface.
This work was supported by the Government Goaloriented Scientific and Technical Program “The development and acquisition of microelectronic technologies, organization of serial production of devices and systems with them” 2008-2011. Decree of the Cabinet of Ministers of Ukraine No 1335 from November 21, 2007.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts
spellingShingle The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts
Belyaev, A.E.
Boltovets, N.S.
Kapitanchuk, L.M.
Konakova, R.V.
Kladko, V.P.
Kudryk, Ya.Ya.
Kuchuk, A.V.
Lytvyn, O.S.
Milenin, V.V.
Korostinskaya, T.V.
Ataubaeva, A.B.
Nevolin, P.V.
title_short The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts
title_full The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts
title_fullStr The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts
title_full_unstemmed The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts
title_sort features of temperature dependence of contact resistivity of au-ti-pd₂si-p⁺ ₋si ohmic contacts
author Belyaev, A.E.
Boltovets, N.S.
Kapitanchuk, L.M.
Konakova, R.V.
Kladko, V.P.
Kudryk, Ya.Ya.
Kuchuk, A.V.
Lytvyn, O.S.
Milenin, V.V.
Korostinskaya, T.V.
Ataubaeva, A.B.
Nevolin, P.V.
author_facet Belyaev, A.E.
Boltovets, N.S.
Kapitanchuk, L.M.
Konakova, R.V.
Kladko, V.P.
Kudryk, Ya.Ya.
Kuchuk, A.V.
Lytvyn, O.S.
Milenin, V.V.
Korostinskaya, T.V.
Ataubaeva, A.B.
Nevolin, P.V.
publishDate 2010
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description We consider the features of formation of Au-Ti-Pd ohmic contacts to p⁺₋Si. Metallization was made by vacuum thermal sputtering of Pd, Ti and Au films onto the Si substrate heated up to 330 °С. It is shown that the contact resistivity increases with temperature; this is typical of metallic conductivity. We suggest that the ohmic contact is formed owing to appearance of shunts at Pd deposition on dislocations or other structural defects. The number of shunts per unit area is close to the measured density of structural defects at the metal-Si interface.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/117698
citation_txt The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts /A.E. Belyaev, N.S. Boltovets, L.M. Kapitanchuk, R.V. Konakova, V.P. Kladko, Ya.Ya. Kudryk, A.V. Kuchuk, O.S. Lytvyn, V.V. Milenin, T.V. Korostinskaya, A.B. Ataubaeva, P.V. Nevolin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 8-11. — Бібліогр.: 14 назв. — англ.
work_keys_str_mv AT belyaevae thefeaturesoftemperaturedependenceofcontactresistivityofautipd2sipsiohmiccontacts
AT boltovetsns thefeaturesoftemperaturedependenceofcontactresistivityofautipd2sipsiohmiccontacts
AT kapitanchuklm thefeaturesoftemperaturedependenceofcontactresistivityofautipd2sipsiohmiccontacts
AT konakovarv thefeaturesoftemperaturedependenceofcontactresistivityofautipd2sipsiohmiccontacts
AT kladkovp thefeaturesoftemperaturedependenceofcontactresistivityofautipd2sipsiohmiccontacts
AT kudrykyaya thefeaturesoftemperaturedependenceofcontactresistivityofautipd2sipsiohmiccontacts
AT kuchukav thefeaturesoftemperaturedependenceofcontactresistivityofautipd2sipsiohmiccontacts
AT lytvynos thefeaturesoftemperaturedependenceofcontactresistivityofautipd2sipsiohmiccontacts
AT mileninvv thefeaturesoftemperaturedependenceofcontactresistivityofautipd2sipsiohmiccontacts
AT korostinskayatv thefeaturesoftemperaturedependenceofcontactresistivityofautipd2sipsiohmiccontacts
AT ataubaevaab thefeaturesoftemperaturedependenceofcontactresistivityofautipd2sipsiohmiccontacts
AT nevolinpv thefeaturesoftemperaturedependenceofcontactresistivityofautipd2sipsiohmiccontacts
AT belyaevae featuresoftemperaturedependenceofcontactresistivityofautipd2sipsiohmiccontacts
AT boltovetsns featuresoftemperaturedependenceofcontactresistivityofautipd2sipsiohmiccontacts
AT kapitanchuklm featuresoftemperaturedependenceofcontactresistivityofautipd2sipsiohmiccontacts
AT konakovarv featuresoftemperaturedependenceofcontactresistivityofautipd2sipsiohmiccontacts
AT kladkovp featuresoftemperaturedependenceofcontactresistivityofautipd2sipsiohmiccontacts
AT kudrykyaya featuresoftemperaturedependenceofcontactresistivityofautipd2sipsiohmiccontacts
AT kuchukav featuresoftemperaturedependenceofcontactresistivityofautipd2sipsiohmiccontacts
AT lytvynos featuresoftemperaturedependenceofcontactresistivityofautipd2sipsiohmiccontacts
AT mileninvv featuresoftemperaturedependenceofcontactresistivityofautipd2sipsiohmiccontacts
AT korostinskayatv featuresoftemperaturedependenceofcontactresistivityofautipd2sipsiohmiccontacts
AT ataubaevaab featuresoftemperaturedependenceofcontactresistivityofautipd2sipsiohmiccontacts
AT nevolinpv featuresoftemperaturedependenceofcontactresistivityofautipd2sipsiohmiccontacts
first_indexed 2025-12-01T20:33:57Z
last_indexed 2025-12-01T20:33:57Z
_version_ 1850860917742370816