Bunak, S., Buyanin, A., Ilchenko, V., Marin, V., Melnik, V., Khacevich, I., . . . Shkavro, A. (2010). Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2. Semiconductor Physics Quantum Electronics & Optoelectronics.
Чикаго стиль цитування (17-те видання)Bunak, S.V, A.A Buyanin, V.V Ilchenko, V.V Marin, V.P Melnik, I.M Khacevich, O.V Tretyak, та A.G Shkavro. "Electrical Properties of Semiconductor Structures with Si Nanoclusters in SiO₂ Grown by High Temperature Annealing Technology of SiOx Layer, X<2." Semiconductor Physics Quantum Electronics & Optoelectronics 2010.
Стиль цитування MLA (8-ме видання)Bunak, S.V, et al. "Electrical Properties of Semiconductor Structures with Si Nanoclusters in SiO₂ Grown by High Temperature Annealing Technology of SiOx Layer, X<2." Semiconductor Physics Quantum Electronics & Optoelectronics, 2010.