Bunak, S., Buyanin, A., Ilchenko, V., Marin, V., Melnik, V., Khacevich, I., . . . Shkavro, A. (2010). Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago Style (17th ed.) CitationBunak, S.V, A.A Buyanin, V.V Ilchenko, V.V Marin, V.P Melnik, I.M Khacevich, O.V Tretyak, and A.G Shkavro. "Electrical Properties of Semiconductor Structures with Si Nanoclusters in SiO₂ Grown by High Temperature Annealing Technology of SiOx Layer, X<2." Semiconductor Physics Quantum Electronics & Optoelectronics 2010.
MLA (8th ed.) CitationBunak, S.V, et al. "Electrical Properties of Semiconductor Structures with Si Nanoclusters in SiO₂ Grown by High Temperature Annealing Technology of SiOx Layer, X<2." Semiconductor Physics Quantum Electronics & Optoelectronics, 2010.