Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2010
• Hauptverfasser: Bunak, S.V., Buyanin, A.A., Ilchenko, V.V., Marin, V.V., Melnik, V.P., Khacevich, I.M., Tretyak, O.V., Shkavro, A.G.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117699
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2 / S.V. Bunak, A.A. Buyanin, V.V. Ilchenko, V.V. Marin, V.P. Melnik, I.M. Khacevich, O.V. Tretyak, A.G. Shkavro // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 12-18. — Бібліогр.: 19 назв. — англ.

The theoretical and experimental investigations of electrical properties of the SiO₂/Si-ncs/SiO₂/Si structures grown by high temperature annealing SiOx, X<2, have been carried out. The influence of Si cluster growth conditions on frequency dependences of C - V characteristics, static and dynamic conductance of investigated structures has been clearly observed. As a result of theoretical modeling, C - V dependences have been calculated. The experimentally obtained negative constituent of differential capacitance has been qualitatively described. It has been experimentally found that the SiO₂/Si-ncs/SiO₂/Si structures with the tunnel dielectric layer revealed the effect of memorizing.