X-ray diffraction study of deformation state in InGaN/GaN multilayered structures

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2010
• ISSN: 1560-8034
• Hauptverfasser: Kladko, V.P., Kuchuk, A.V., Safryuk, N.V., Machulin, V.F., Belyaev, A.E., Konakova, R.V., Yavich, B.S.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117701
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: X-ray diffraction study of deformation state in InGaN/GaN
 multilayered structures / V.P. Kladko, A.V. Kuchuk, N.V. Safryuk, V.F. Machulin, A.E. Belyaev, R.V. Konakova, B.S. Yavich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 1-7. — Бібліогр.: 21 назв. — англ.

High resolution X-ray diffractometry (HRXRD) was used to investigate InxGa₁₋xN/GaN multilayered structures grown by the metal-organic chemical vapor
 deposition (MOCVD) method. Deformation conditions in the superlattice (SL) and its
 separate layers, degree of relaxation in the structure layers, as well as the period of the
 SL, thicknesses of its layers and composition of InxGa₁₋x solid solution in active area
 were determined. It was found that SL was grown on the relaxed buffer layer. SL layers
 were grown practically coherent with slight relaxation of InGaN layer (about 1.5 %). The
 role of dislocations in relaxation processes was established. Analysis of experimental
 diffraction spectra in these multilayered structures within the frameworks of ParratSperiozu
 was adapted for hexagonal syngony structures.