X-ray diffraction study of deformation state in InGaN/GaN multilayered structures
High resolution X-ray diffractometry (HRXRD) was used to investigate InxGa₁₋xN/GaN multilayered structures grown by the metal-organic chemical vapor
 deposition (MOCVD) method. Deformation conditions in the superlattice (SL) and its
 separate layers, degree of relaxation in the struc...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2010 |
| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117701 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | X-ray diffraction study of deformation state in InGaN/GaN
 multilayered structures / V.P. Kladko, A.V. Kuchuk, N.V. Safryuk, V.F. Machulin, A.E. Belyaev, R.V. Konakova, B.S. Yavich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 1-7. — Бібліогр.: 21 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862723143020314624 |
|---|---|
| author | Kladko, V.P. Kuchuk, A.V. Safryuk, N.V. Machulin, V.F. Belyaev, A.E. Konakova, R.V. Yavich, B.S. |
| author_facet | Kladko, V.P. Kuchuk, A.V. Safryuk, N.V. Machulin, V.F. Belyaev, A.E. Konakova, R.V. Yavich, B.S. |
| citation_txt | X-ray diffraction study of deformation state in InGaN/GaN
 multilayered structures / V.P. Kladko, A.V. Kuchuk, N.V. Safryuk, V.F. Machulin, A.E. Belyaev, R.V. Konakova, B.S. Yavich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 1-7. — Бібліогр.: 21 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | High resolution X-ray diffractometry (HRXRD) was used to investigate InxGa₁₋xN/GaN multilayered structures grown by the metal-organic chemical vapor
deposition (MOCVD) method. Deformation conditions in the superlattice (SL) and its
separate layers, degree of relaxation in the structure layers, as well as the period of the
SL, thicknesses of its layers and composition of InxGa₁₋x solid solution in active area
were determined. It was found that SL was grown on the relaxed buffer layer. SL layers
were grown practically coherent with slight relaxation of InGaN layer (about 1.5 %). The
role of dislocations in relaxation processes was established. Analysis of experimental
diffraction spectra in these multilayered structures within the frameworks of ParratSperiozu
was adapted for hexagonal syngony structures.
|
| first_indexed | 2025-12-07T18:39:41Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117701 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:39:41Z |
| publishDate | 2010 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kladko, V.P. Kuchuk, A.V. Safryuk, N.V. Machulin, V.F. Belyaev, A.E. Konakova, R.V. Yavich, B.S. 2017-05-26T12:13:38Z 2017-05-26T12:13:38Z 2010 X-ray diffraction study of deformation state in InGaN/GaN
 multilayered structures / V.P. Kladko, A.V. Kuchuk, N.V. Safryuk, V.F. Machulin, A.E. Belyaev, R.V. Konakova, B.S. Yavich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 1-7. — Бібліогр.: 21 назв. — англ. 1560-8034 PACS 61.05.cp, 64.75.Nx, 78.55.Cr, -m, 78.67.De, Hc, 81.07.St https://nasplib.isofts.kiev.ua/handle/123456789/117701 High resolution X-ray diffractometry (HRXRD) was used to investigate InxGa₁₋xN/GaN multilayered structures grown by the metal-organic chemical vapor
 deposition (MOCVD) method. Deformation conditions in the superlattice (SL) and its
 separate layers, degree of relaxation in the structure layers, as well as the period of the
 SL, thicknesses of its layers and composition of InxGa₁₋x solid solution in active area
 were determined. It was found that SL was grown on the relaxed buffer layer. SL layers
 were grown practically coherent with slight relaxation of InGaN layer (about 1.5 %). The
 role of dislocations in relaxation processes was established. Analysis of experimental
 diffraction spectra in these multilayered structures within the frameworks of ParratSperiozu
 was adapted for hexagonal syngony structures. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics X-ray diffraction study of deformation state in InGaN/GaN multilayered structures Article published earlier |
| spellingShingle | X-ray diffraction study of deformation state in InGaN/GaN multilayered structures Kladko, V.P. Kuchuk, A.V. Safryuk, N.V. Machulin, V.F. Belyaev, A.E. Konakova, R.V. Yavich, B.S. |
| title | X-ray diffraction study of deformation state in InGaN/GaN multilayered structures |
| title_full | X-ray diffraction study of deformation state in InGaN/GaN multilayered structures |
| title_fullStr | X-ray diffraction study of deformation state in InGaN/GaN multilayered structures |
| title_full_unstemmed | X-ray diffraction study of deformation state in InGaN/GaN multilayered structures |
| title_short | X-ray diffraction study of deformation state in InGaN/GaN multilayered structures |
| title_sort | x-ray diffraction study of deformation state in ingan/gan multilayered structures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117701 |
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