Silicon carbide defects and luminescence centers in current heated 6H-SiC
At room temperature yellow photoluminescence with a broad peak of 2.13 eV
 is a well-known feature of boron-doped 6H-SiC. Usually yellow luminescence is
 regarded as recombination involving both the boron-related deep acceptor and donor
 level. But the nature of the deep leve...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2010 |
| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117702 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Silicon carbide defects and luminescence centers
 in current heated 6H-SiC / S.W. Lee, S.I. Vlaskina, V.I. Vlaskin, I.V. Zaharchenko, V.A. Gubanov, G.N. Mishinova, G.S. Svechnikov, V.E. Rodionov, and S.A. Podlasov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 24-29. — Бібліогр.: 23 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862600369911103488 |
|---|---|
| author | Lee, S.W. Vlaskina, S.I. Vlaskin, V.I. Zaharchenko, I.V. Gubanov, V.A. Mishinova, G.N. Svechnikov, G.S. Rodionov, V.E. Podlasov, S.A. |
| author_facet | Lee, S.W. Vlaskina, S.I. Vlaskin, V.I. Zaharchenko, I.V. Gubanov, V.A. Mishinova, G.N. Svechnikov, G.S. Rodionov, V.E. Podlasov, S.A. |
| citation_txt | Silicon carbide defects and luminescence centers
 in current heated 6H-SiC / S.W. Lee, S.I. Vlaskina, V.I. Vlaskin, I.V. Zaharchenko, V.A. Gubanov, G.N. Mishinova, G.S. Svechnikov, V.E. Rodionov, and S.A. Podlasov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 24-29. — Бібліогр.: 23 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | At room temperature yellow photoluminescence with a broad peak of 2.13 eV
is a well-known feature of boron-doped 6H-SiC. Usually yellow luminescence is
regarded as recombination involving both the boron-related deep acceptor and donor
level. But the nature of the deep level has not been clearly understood yet. We annealed
6H-SiC substrates by current in vacuum without boron injection at the temperature of
1350 and 1500 ºC. We received red and yellow luminescence in PL spectrum for the
heated 6H-SiC. The luminescence was regarded as donor-acceptor pair recombination
involving the deep aluminum acceptor related to the adjacent carbon vacancies and
nitrogen donor or the formation of quantum well like regions of 3C-SiC in 6H-SiC
matrix.
|
| first_indexed | 2025-11-27T23:54:59Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117702 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-27T23:54:59Z |
| publishDate | 2010 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Lee, S.W. Vlaskina, S.I. Vlaskin, V.I. Zaharchenko, I.V. Gubanov, V.A. Mishinova, G.N. Svechnikov, G.S. Rodionov, V.E. Podlasov, S.A. 2017-05-26T12:18:31Z 2017-05-26T12:18:31Z 2010 Silicon carbide defects and luminescence centers
 in current heated 6H-SiC / S.W. Lee, S.I. Vlaskina, V.I. Vlaskin, I.V. Zaharchenko, V.A. Gubanov, G.N. Mishinova, G.S. Svechnikov, V.E. Rodionov, and S.A. Podlasov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 24-29. — Бібліогр.: 23 назв. — англ. 1560-8034 PACS 71.55.Gs, 78.55.-m, Cr, 78.60.-b, 78.66.Hf https://nasplib.isofts.kiev.ua/handle/123456789/117702 At room temperature yellow photoluminescence with a broad peak of 2.13 eV
 is a well-known feature of boron-doped 6H-SiC. Usually yellow luminescence is
 regarded as recombination involving both the boron-related deep acceptor and donor
 level. But the nature of the deep level has not been clearly understood yet. We annealed
 6H-SiC substrates by current in vacuum without boron injection at the temperature of
 1350 and 1500 ºC. We received red and yellow luminescence in PL spectrum for the
 heated 6H-SiC. The luminescence was regarded as donor-acceptor pair recombination
 involving the deep aluminum acceptor related to the adjacent carbon vacancies and
 nitrogen donor or the formation of quantum well like regions of 3C-SiC in 6H-SiC
 matrix. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Silicon carbide defects and luminescence centers in current heated 6H-SiC Article published earlier |
| spellingShingle | Silicon carbide defects and luminescence centers in current heated 6H-SiC Lee, S.W. Vlaskina, S.I. Vlaskin, V.I. Zaharchenko, I.V. Gubanov, V.A. Mishinova, G.N. Svechnikov, G.S. Rodionov, V.E. Podlasov, S.A. |
| title | Silicon carbide defects and luminescence centers in current heated 6H-SiC |
| title_full | Silicon carbide defects and luminescence centers in current heated 6H-SiC |
| title_fullStr | Silicon carbide defects and luminescence centers in current heated 6H-SiC |
| title_full_unstemmed | Silicon carbide defects and luminescence centers in current heated 6H-SiC |
| title_short | Silicon carbide defects and luminescence centers in current heated 6H-SiC |
| title_sort | silicon carbide defects and luminescence centers in current heated 6h-sic |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117702 |
| work_keys_str_mv | AT leesw siliconcarbidedefectsandluminescencecentersincurrentheated6hsic AT vlaskinasi siliconcarbidedefectsandluminescencecentersincurrentheated6hsic AT vlaskinvi siliconcarbidedefectsandluminescencecentersincurrentheated6hsic AT zaharchenkoiv siliconcarbidedefectsandluminescencecentersincurrentheated6hsic AT gubanovva siliconcarbidedefectsandluminescencecentersincurrentheated6hsic AT mishinovagn siliconcarbidedefectsandluminescencecentersincurrentheated6hsic AT svechnikovgs siliconcarbidedefectsandluminescencecentersincurrentheated6hsic AT rodionovve siliconcarbidedefectsandluminescencecentersincurrentheated6hsic AT podlasovsa siliconcarbidedefectsandluminescencecentersincurrentheated6hsic |