The electric field gradient asymmetry parameter in InSe
The complex NQR spectra of ¹¹⁵In caused by presence of structural defects
 called polytypes are observed in a monocrystalline InSe sample. Multiple ratio of
 average frequencies of NQR spectra that correspond to four resonance transitions of
 quadrupole nuclii with spins I =...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2011 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117706 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | The electric field gradient asymmetry parameter in InSe / Z.D. Kovalyuk, A.G. Khandozhko, G.I. Lastivka, A.P. Samila // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 164-166. — Бібліогр.: 8 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862659620128948224 |
|---|---|
| author | Kovalyuk, Z.D. Khandozhko, A.G. Lastivka, G.I. Samila, A.P. |
| author_facet | Kovalyuk, Z.D. Khandozhko, A.G. Lastivka, G.I. Samila, A.P. |
| citation_txt | The electric field gradient asymmetry parameter in InSe / Z.D. Kovalyuk, A.G. Khandozhko, G.I. Lastivka, A.P. Samila // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 164-166. — Бібліогр.: 8 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The complex NQR spectra of ¹¹⁵In caused by presence of structural defects
called polytypes are observed in a monocrystalline InSe sample. Multiple ratio of
average frequencies of NQR spectra that correspond to four resonance transitions of
quadrupole nuclii with spins I = 9/2 testifies to existence of axial symmetry of the
electric field gradient in In nucleus positions inside the InSe crystal structure. The latter
is confirmed by the dependence of the NQR spectrum amplitude on the angle between
the main crystal axis c and vector of high-frequency field H₁. However, presence of a
residual intensity in the spectra at c || Н₁ can indicate the existence of crystal blocks in
bulk of the sample with weak angular misorientation.
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| first_indexed | 2025-12-02T09:45:47Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-117706 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-02T09:45:47Z |
| publishDate | 2011 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kovalyuk, Z.D. Khandozhko, A.G. Lastivka, G.I. Samila, A.P. 2017-05-26T12:31:29Z 2017-05-26T12:31:29Z 2011 The electric field gradient asymmetry parameter in InSe / Z.D. Kovalyuk, A.G. Khandozhko, G.I. Lastivka, A.P. Samila // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 164-166. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 76.60.Gv https://nasplib.isofts.kiev.ua/handle/123456789/117706 The complex NQR spectra of ¹¹⁵In caused by presence of structural defects
 called polytypes are observed in a monocrystalline InSe sample. Multiple ratio of
 average frequencies of NQR spectra that correspond to four resonance transitions of
 quadrupole nuclii with spins I = 9/2 testifies to existence of axial symmetry of the
 electric field gradient in In nucleus positions inside the InSe crystal structure. The latter
 is confirmed by the dependence of the NQR spectrum amplitude on the angle between
 the main crystal axis c and vector of high-frequency field H₁. However, presence of a
 residual intensity in the spectra at c || Н₁ can indicate the existence of crystal blocks in
 bulk of the sample with weak angular misorientation. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics The electric field gradient asymmetry parameter in InSe Article published earlier |
| spellingShingle | The electric field gradient asymmetry parameter in InSe Kovalyuk, Z.D. Khandozhko, A.G. Lastivka, G.I. Samila, A.P. |
| title | The electric field gradient asymmetry parameter in InSe |
| title_full | The electric field gradient asymmetry parameter in InSe |
| title_fullStr | The electric field gradient asymmetry parameter in InSe |
| title_full_unstemmed | The electric field gradient asymmetry parameter in InSe |
| title_short | The electric field gradient asymmetry parameter in InSe |
| title_sort | electric field gradient asymmetry parameter in inse |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117706 |
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