The electric field gradient asymmetry parameter in InSe

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2011
• Main Authors: Kovalyuk, Z.D., Khandozhko, A.G., Lastivka, G.I., Samila, A.P.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117706
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: The electric field gradient asymmetry parameter in InSe / Z.D. Kovalyuk, A.G. Khandozhko, G.I. Lastivka, A.P. Samila // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 164-166. — Бібліогр.: 8 назв. — англ.

The complex NQR spectra of ¹¹⁵In caused by presence of structural defects called polytypes are observed in a monocrystalline InSe sample. Multiple ratio of average frequencies of NQR spectra that correspond to four resonance transitions of quadrupole nuclii with spins I = 9/2 testifies to existen...