Gaidar, G., Dolgolenko, A., & Litovchenko, P. (2011). The kinetic of point defect transformation during the annealing process in electron-irradiated silicon. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago-Zitierstil (17. Ausg.)Gaidar, G.P, A.P Dolgolenko, und P.G Litovchenko. "The Kinetic of Point Defect Transformation During the Annealing Process in Electron-irradiated Silicon." Semiconductor Physics Quantum Electronics & Optoelectronics 2011.
MLA-Zitierstil (8. Ausg.)Gaidar, G.P, et al. "The Kinetic of Point Defect Transformation During the Annealing Process in Electron-irradiated Silicon." Semiconductor Physics Quantum Electronics & Optoelectronics, 2011.
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