The kinetic of point defect transformation during the annealing process in electron-irradiated silicon
The A-centers (VO) annealing and transformation of precursors to form stable
 СiОi defects during these processes are described. It was found the necessity to take into
 account annihilation of vacancy type defects with the interstitial type mobile defects to
 describe the...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2011 |
| ISSN: | 1560-8034 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117707 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The kinetic of point defect transformation during the annealing process in electron-irradiated silicon / G.P. Gaidar, A.P. Dolgolenko, P.G. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 213-221. — Бібліогр.: 32 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The A-centers (VO) annealing and transformation of precursors to form stable
СiОi defects during these processes are described. It was found the necessity to take into
account annihilation of vacancy type defects with the interstitial type mobile defects to
describe the annealing of defects. It was shown that the energies of migration for vacancy
(V) and interstitial carbon atoms Сi that are defined by the degree of their localization in
silicon lattice at the temperature close to 550 K are equal Emv = 1.1 eV and Emc = 1.16 eV, accordingly.
|
|---|---|
| ISSN: | 1560-8034 |