The kinetic of point defect transformation during the annealing process in electron-irradiated silicon
The A-centers (VO) annealing and transformation of precursors to form stable СiОi defects during these processes are described. It was found the necessity to take into account annihilation of vacancy type defects with the interstitial type mobile defects to describe the annealing of defects. I...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2011 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117707 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The kinetic of point defect transformation during the annealing process in electron-irradiated silicon / G.P. Gaidar, A.P. Dolgolenko, P.G. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 213-221. — Бібліогр.: 32 назв. — англ. |
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Gaidar, G.P. Dolgolenko, A.P. Litovchenko, P.G. 2017-05-26T12:47:42Z 2017-05-26T12:47:42Z 2011 The kinetic of point defect transformation during the annealing process in electron-irradiated silicon / G.P. Gaidar, A.P. Dolgolenko, P.G. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 213-221. — Бібліогр.: 32 назв. — англ. 1560-8034 PACS 61.72.Cc, Ji; 61.80.Fe, 61.82.Fk https://nasplib.isofts.kiev.ua/handle/123456789/117707 The A-centers (VO) annealing and transformation of precursors to form stable СiОi defects during these processes are described. It was found the necessity to take into account annihilation of vacancy type defects with the interstitial type mobile defects to describe the annealing of defects. It was shown that the energies of migration for vacancy (V) and interstitial carbon atoms Сi that are defined by the degree of their localization in silicon lattice at the temperature close to 550 K are equal Emv = 1.1 eV and Emc = 1.16 eV, accordingly. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics The kinetic of point defect transformation during the annealing process in electron-irradiated silicon Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
The kinetic of point defect transformation during the annealing process in electron-irradiated silicon |
| spellingShingle |
The kinetic of point defect transformation during the annealing process in electron-irradiated silicon Gaidar, G.P. Dolgolenko, A.P. Litovchenko, P.G. |
| title_short |
The kinetic of point defect transformation during the annealing process in electron-irradiated silicon |
| title_full |
The kinetic of point defect transformation during the annealing process in electron-irradiated silicon |
| title_fullStr |
The kinetic of point defect transformation during the annealing process in electron-irradiated silicon |
| title_full_unstemmed |
The kinetic of point defect transformation during the annealing process in electron-irradiated silicon |
| title_sort |
kinetic of point defect transformation during the annealing process in electron-irradiated silicon |
| author |
Gaidar, G.P. Dolgolenko, A.P. Litovchenko, P.G. |
| author_facet |
Gaidar, G.P. Dolgolenko, A.P. Litovchenko, P.G. |
| publishDate |
2011 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The A-centers (VO) annealing and transformation of precursors to form stable
СiОi defects during these processes are described. It was found the necessity to take into
account annihilation of vacancy type defects with the interstitial type mobile defects to
describe the annealing of defects. It was shown that the energies of migration for vacancy
(V) and interstitial carbon atoms Сi that are defined by the degree of their localization in
silicon lattice at the temperature close to 550 K are equal Emv = 1.1 eV and Emc = 1.16 eV, accordingly.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117707 |
| citation_txt |
The kinetic of point defect transformation during the annealing process in electron-irradiated silicon / G.P. Gaidar, A.P. Dolgolenko, P.G. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 213-221. — Бібліогр.: 32 назв. — англ. |
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| first_indexed |
2025-12-07T13:12:44Z |
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