Charge transport in bismuth orthogermanate crystals
Current-voltage relations in bismuth orthogermanate crystals with Ag, Pt, InGa
 electrodes have been measured in the modes of double and unipolar injection of
 charge carriers. It has been shown that Bi₄Ge₃O₁₂ is relaxation type semiconductor. The
 appearance of the regions w...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2011 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117709 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Charge transport in bismuth orthogermanate crystals / T.M. Bochkova, S.N. Plyaka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 170-174. — Бібліогр.: 17 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | Current-voltage relations in bismuth orthogermanate crystals with Ag, Pt, InGa
electrodes have been measured in the modes of double and unipolar injection of
charge carriers. It has been shown that Bi₄Ge₃O₁₂ is relaxation type semiconductor. The
appearance of the regions with negative differential resistance or sublinear rise of the
current in characteristics is connected with the injection of the minority charge
carriers and recombination processes in the space charge layer.
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| ISSN: | 1560-8034 |