Charge transport in bismuth orthogermanate crystals

Current-voltage relations in bismuth orthogermanate crystals with Ag, Pt, InGa
 electrodes have been measured in the modes of double and unipolar injection of
 charge carriers. It has been shown that Bi₄Ge₃O₁₂ is relaxation type semiconductor. The
 appearance of the regions w...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2011
Hauptverfasser: Bochkova, T.M., Plyaka, S.N.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/117709
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Charge transport in bismuth orthogermanate crystals / T.M. Bochkova, S.N. Plyaka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 170-174. — Бібліогр.: 17 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Bochkova, T.M.
Plyaka, S.N.
author_facet Bochkova, T.M.
Plyaka, S.N.
citation_txt Charge transport in bismuth orthogermanate crystals / T.M. Bochkova, S.N. Plyaka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 170-174. — Бібліогр.: 17 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description Current-voltage relations in bismuth orthogermanate crystals with Ag, Pt, InGa
 electrodes have been measured in the modes of double and unipolar injection of
 charge carriers. It has been shown that Bi₄Ge₃O₁₂ is relaxation type semiconductor. The
 appearance of the regions with negative differential resistance or sublinear rise of the
 current in characteristics is connected with the injection of the minority charge
 carriers and recombination processes in the space charge layer.
first_indexed 2025-11-26T01:42:45Z
format Article
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id nasplib_isofts_kiev_ua-123456789-117709
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-11-26T01:42:45Z
publishDate 2011
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Bochkova, T.M.
Plyaka, S.N.
2017-05-26T12:49:26Z
2017-05-26T12:49:26Z
2011
Charge transport in bismuth orthogermanate crystals / T.M. Bochkova, S.N. Plyaka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 170-174. — Бібліогр.: 17 назв. — англ.
1560-8034
PACS 72.20.Ht, -i
https://nasplib.isofts.kiev.ua/handle/123456789/117709
Current-voltage relations in bismuth orthogermanate crystals with Ag, Pt, InGa
 electrodes have been measured in the modes of double and unipolar injection of
 charge carriers. It has been shown that Bi₄Ge₃O₁₂ is relaxation type semiconductor. The
 appearance of the regions with negative differential resistance or sublinear rise of the
 current in characteristics is connected with the injection of the minority charge
 carriers and recombination processes in the space charge layer.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Charge transport in bismuth orthogermanate crystals
Article
published earlier
spellingShingle Charge transport in bismuth orthogermanate crystals
Bochkova, T.M.
Plyaka, S.N.
title Charge transport in bismuth orthogermanate crystals
title_full Charge transport in bismuth orthogermanate crystals
title_fullStr Charge transport in bismuth orthogermanate crystals
title_full_unstemmed Charge transport in bismuth orthogermanate crystals
title_short Charge transport in bismuth orthogermanate crystals
title_sort charge transport in bismuth orthogermanate crystals
url https://nasplib.isofts.kiev.ua/handle/123456789/117709
work_keys_str_mv AT bochkovatm chargetransportinbismuthorthogermanatecrystals
AT plyakasn chargetransportinbismuthorthogermanatecrystals