Charge transport in bismuth orthogermanate crystals

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2011
• ISSN: 1560-8034
• Main Authors: Bochkova, T.M., Plyaka, S.N.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117709
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Charge transport in bismuth orthogermanate crystals / T.M. Bochkova, S.N. Plyaka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 170-174. — Бібліогр.: 17 назв. — англ.

Current-voltage relations in bismuth orthogermanate crystals with Ag, Pt, InGa
 electrodes have been measured in the modes of double and unipolar injection of
 charge carriers. It has been shown that Bi₄Ge₃O₁₂ is relaxation type semiconductor. The
 appearance of the regions w...