Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency
The mm-wave as well as noise properties of IMPATT diodes for the D-band are efficiently determined, with 4H-SiC and wurtzite type GaN as base materials, using advanced computer simulation techniques developed by the authors. The breakdown voltage (180 V) and efficiency (14.7%) is higher in case of 4...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2011 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117715 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency / P.R. Tripathy, M. Mukherjee, S.P. Pati // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 137-144. — Бібліогр.: 26 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862563885075136512 |
|---|---|
| author | Tripathy, P.R. Mukherjee, M. Pati, S.P. |
| author_facet | Tripathy, P.R. Mukherjee, M. Pati, S.P. |
| citation_txt | Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency / P.R. Tripathy, M. Mukherjee, S.P. Pati // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 137-144. — Бібліогр.: 26 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The mm-wave as well as noise properties of IMPATT diodes for the D-band are efficiently determined, with 4H-SiC and wurtzite type GaN as base materials, using advanced computer simulation techniques developed by the authors. The breakdown voltage (180 V) and efficiency (14.7%) is higher in case of 4H-SiC as compared to wz GaN based diode having the breakdown voltage (153 V) and efficiency (13.7%). The study indicates that 4H-SiC IMPATT diode is capable of generating high RF power density of about 8.383×10¹⁰ W/m² as compared to GaN IMPATT diode that is capable to develop the power density 6.847×10¹⁰ W/m² for the same frequency of operation. It is also observed that wz-GaN exhibits better noise behavior 7.42×10⁻¹⁵ V²·s than SiC (5.16×10⁻¹⁵ V² ·s) for IMPATT operation at 140 GHz. A tradeoff between the power output and noise from the device reveals that wz-GaN would be a suitable base material for high power application of IMPATT diode with moderate noise.
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| first_indexed | 2025-11-25T23:28:32Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117715 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T23:28:32Z |
| publishDate | 2011 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Tripathy, P.R. Mukherjee, M. Pati, S.P. 2017-05-26T13:00:15Z 2017-05-26T13:00:15Z 2011 Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency / P.R. Tripathy, M. Mukherjee, S.P. Pati // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 137-144. — Бібліогр.: 26 назв. — англ. 1560-8034 PACS 73.50.Td, 85.30.Kk https://nasplib.isofts.kiev.ua/handle/123456789/117715 The mm-wave as well as noise properties of IMPATT diodes for the D-band are efficiently determined, with 4H-SiC and wurtzite type GaN as base materials, using advanced computer simulation techniques developed by the authors. The breakdown voltage (180 V) and efficiency (14.7%) is higher in case of 4H-SiC as compared to wz GaN based diode having the breakdown voltage (153 V) and efficiency (13.7%). The study indicates that 4H-SiC IMPATT diode is capable of generating high RF power density of about 8.383×10¹⁰ W/m² as compared to GaN IMPATT diode that is capable to develop the power density 6.847×10¹⁰ W/m² for the same frequency of operation. It is also observed that wz-GaN exhibits better noise behavior 7.42×10⁻¹⁵ V²·s than SiC (5.16×10⁻¹⁵ V² ·s) for IMPATT operation at 140 GHz. A tradeoff between the power output and noise from the device reveals that wz-GaN would be a suitable base material for high power application of IMPATT diode with moderate noise. Moumita Mukherjee is grateful to Defence Research and Development Organisation, Ministry of Defence, Govt. of India for providing her ‘Senior Research Fellowship’ to carry out this research wor en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency Article published earlier |
| spellingShingle | Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency Tripathy, P.R. Mukherjee, M. Pati, S.P. |
| title | Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency |
| title_full | Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency |
| title_fullStr | Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency |
| title_full_unstemmed | Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency |
| title_short | Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency |
| title_sort | dynamic properties and avalanche noise analysis of 4h-sic over wz-gan based impatts at mm-wave window frequency |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117715 |
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