Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency
The mm-wave as well as noise properties of IMPATT diodes for the D-band are efficiently determined, with 4H-SiC and wurtzite type GaN as base materials, using advanced computer simulation techniques developed by the authors. The breakdown voltage (180 V) and efficiency (14.7%) is higher in case of 4...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117715 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency / P.R. Tripathy, M. Mukherjee, S.P. Pati // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 137-144. — Бібліогр.: 26 назв. — англ. |
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nasplib_isofts_kiev_ua-123456789-1177152025-06-03T16:28:46Z Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency Tripathy, P.R. Mukherjee, M. Pati, S.P. The mm-wave as well as noise properties of IMPATT diodes for the D-band are efficiently determined, with 4H-SiC and wurtzite type GaN as base materials, using advanced computer simulation techniques developed by the authors. The breakdown voltage (180 V) and efficiency (14.7%) is higher in case of 4H-SiC as compared to wz GaN based diode having the breakdown voltage (153 V) and efficiency (13.7%). The study indicates that 4H-SiC IMPATT diode is capable of generating high RF power density of about 8.383×10¹⁰ W/m² as compared to GaN IMPATT diode that is capable to develop the power density 6.847×10¹⁰ W/m² for the same frequency of operation. It is also observed that wz-GaN exhibits better noise behavior 7.42×10⁻¹⁵ V²·s than SiC (5.16×10⁻¹⁵ V² ·s) for IMPATT operation at 140 GHz. A tradeoff between the power output and noise from the device reveals that wz-GaN would be a suitable base material for high power application of IMPATT diode with moderate noise. Moumita Mukherjee is grateful to Defence Research and Development Organisation, Ministry of Defence, Govt. of India for providing her ‘Senior Research Fellowship’ to carry out this research wor 2011 Article Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency / P.R. Tripathy, M. Mukherjee, S.P. Pati // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 137-144. — Бібліогр.: 26 назв. — англ. 1560-8034 PACS 73.50.Td, 85.30.Kk https://nasplib.isofts.kiev.ua/handle/123456789/117715 en Semiconductor Physics Quantum Electronics & Optoelectronics application/pdf Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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English |
| description |
The mm-wave as well as noise properties of IMPATT diodes for the D-band are efficiently determined, with 4H-SiC and wurtzite type GaN as base materials, using advanced computer simulation techniques developed by the authors. The breakdown voltage (180 V) and efficiency (14.7%) is higher in case of 4H-SiC as compared to wz GaN based diode having the breakdown voltage (153 V) and efficiency (13.7%). The study indicates that 4H-SiC IMPATT diode is capable of generating high RF power density of about 8.383×10¹⁰ W/m² as compared to GaN IMPATT diode that is capable to develop the power density 6.847×10¹⁰ W/m² for the same frequency of operation. It is also observed that wz-GaN exhibits better noise behavior 7.42×10⁻¹⁵ V²·s than SiC (5.16×10⁻¹⁵ V² ·s) for IMPATT operation at 140 GHz. A tradeoff between the power output and noise from the device reveals that wz-GaN would be a suitable base material for high power application of IMPATT diode with moderate noise. |
| format |
Article |
| author |
Tripathy, P.R. Mukherjee, M. Pati, S.P. |
| spellingShingle |
Tripathy, P.R. Mukherjee, M. Pati, S.P. Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Tripathy, P.R. Mukherjee, M. Pati, S.P. |
| author_sort |
Tripathy, P.R. |
| title |
Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency |
| title_short |
Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency |
| title_full |
Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency |
| title_fullStr |
Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency |
| title_full_unstemmed |
Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency |
| title_sort |
dynamic properties and avalanche noise analysis of 4h-sic over wz-gan based impatts at mm-wave window frequency |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2011 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117715 |
| citation_txt |
Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency / P.R. Tripathy, M. Mukherjee, S.P. Pati // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 137-144. — Бібліогр.: 26 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
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| first_indexed |
2025-11-25T23:28:32Z |
| last_indexed |
2025-11-25T23:28:32Z |
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