Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2011
• Main Authors: Tripathy, P.R., Mukherjee, M., Pati, S.P.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117715
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency / P.R. Tripathy, M. Mukherjee, S.P. Pati // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 137-144. — Бібліогр.: 26 назв. — англ.

The mm-wave as well as noise properties of IMPATT diodes for the D-band are efficiently determined, with 4H-SiC and wurtzite type GaN as base materials, using advanced computer simulation techniques developed by the authors. The breakdown voltage (180 V) and efficiency (14.7%) is higher in case of 4...