Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions

The chemical etching of Ві₂Те₃ and n-(Ві₂Те₃)₀.₉(Sb₂Te₃)₀.₀₅(Sb₂Se₃)0.05 and p- (Bi₂Te₃)₀.₂₅(Sb₂Te₃)₀.₇₂(Sb₂Se₃)₀.₀₃ crystals of solid solutions with HNO₃–HCl etchant compositions was investigated. The dependences of dissolution rate of these semiconductors on etchant composition, stirring, te...

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Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2011
Автори: Pavlovich, I.I., Tomashik, Z.F., Stratiychuk, I.B., Tomashik, V.M., Savchuk, O.A., Kravtsova, A.S.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/117719
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions / I.I. Pavlovich, Z.F. Tomashik, I.B. Stratiychuk, V.M. Tomashik, O.A. Savchuk, A.S. Kravtsova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 200-202. — Бібліогр.: 8 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-117719
record_format dspace
spelling Pavlovich, I.I.
Tomashik, Z.F.
Stratiychuk, I.B.
Tomashik, V.M.
Savchuk, O.A.
Kravtsova, A.S.
2017-05-26T13:05:13Z
2017-05-26T13:05:13Z
2011
Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions / I.I. Pavlovich, Z.F. Tomashik, I.B. Stratiychuk, V.M. Tomashik, O.A. Savchuk, A.S. Kravtsova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 200-202. — Бібліогр.: 8 назв. — англ.
1560-8034
PACS 77.84.Bw, 81.65.Cf, Ps
https://nasplib.isofts.kiev.ua/handle/123456789/117719
The chemical etching of Ві₂Те₃ and n-(Ві₂Те₃)₀.₉(Sb₂Te₃)₀.₀₅(Sb₂Se₃)0.05 and p- (Bi₂Te₃)₀.₂₅(Sb₂Te₃)₀.₇₂(Sb₂Se₃)₀.₀₃ crystals of solid solutions with HNO₃–HCl etchant compositions was investigated. The dependences of dissolution rate of these semiconductors on etchant composition, stirring, temperature and their shelf-time storage have been studied. It was shown that the process of dissolution of the investigated materials in the polishing solutions HNO₃–HCl is limited by the diffusion stages.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions
spellingShingle Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions
Pavlovich, I.I.
Tomashik, Z.F.
Stratiychuk, I.B.
Tomashik, V.M.
Savchuk, O.A.
Kravtsova, A.S.
title_short Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions
title_full Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions
title_fullStr Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions
title_full_unstemmed Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions
title_sort chemical-dynamic polishing of semiconductor materials based on bi and sb chalcogenides by using hno₃–hcl solutions
author Pavlovich, I.I.
Tomashik, Z.F.
Stratiychuk, I.B.
Tomashik, V.M.
Savchuk, O.A.
Kravtsova, A.S.
author_facet Pavlovich, I.I.
Tomashik, Z.F.
Stratiychuk, I.B.
Tomashik, V.M.
Savchuk, O.A.
Kravtsova, A.S.
publishDate 2011
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description The chemical etching of Ві₂Те₃ and n-(Ві₂Те₃)₀.₉(Sb₂Te₃)₀.₀₅(Sb₂Se₃)0.05 and p- (Bi₂Te₃)₀.₂₅(Sb₂Te₃)₀.₇₂(Sb₂Se₃)₀.₀₃ crystals of solid solutions with HNO₃–HCl etchant compositions was investigated. The dependences of dissolution rate of these semiconductors on etchant composition, stirring, temperature and their shelf-time storage have been studied. It was shown that the process of dissolution of the investigated materials in the polishing solutions HNO₃–HCl is limited by the diffusion stages.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/117719
citation_txt Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions / I.I. Pavlovich, Z.F. Tomashik, I.B. Stratiychuk, V.M. Tomashik, O.A. Savchuk, A.S. Kravtsova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 200-202. — Бібліогр.: 8 назв. — англ.
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AT savchukoa chemicaldynamicpolishingofsemiconductormaterialsbasedonbiandsbchalcogenidesbyusinghno3hclsolutions
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