Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions
The chemical etching of Ві₂Те₃ and n-(Ві₂Те₃)₀.₉(Sb₂Te₃)₀.₀₅(Sb₂Se₃)0.05 and p-
 (Bi₂Te₃)₀.₂₅(Sb₂Te₃)₀.₇₂(Sb₂Se₃)₀.₀₃ crystals of solid solutions with HNO₃–HCl etchant
 compositions was investigated. The dependences of dissolution rate of these
 semiconductors on etchant c...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2011 |
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117719 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions / I.I. Pavlovich, Z.F. Tomashik, I.B. Stratiychuk, V.M. Tomashik, O.A. Savchuk, A.S. Kravtsova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 200-202. — Бібліогр.: 8 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862692874493100032 |
|---|---|
| author | Pavlovich, I.I. Tomashik, Z.F. Stratiychuk, I.B. Tomashik, V.M. Savchuk, O.A. Kravtsova, A.S. |
| author_facet | Pavlovich, I.I. Tomashik, Z.F. Stratiychuk, I.B. Tomashik, V.M. Savchuk, O.A. Kravtsova, A.S. |
| citation_txt | Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions / I.I. Pavlovich, Z.F. Tomashik, I.B. Stratiychuk, V.M. Tomashik, O.A. Savchuk, A.S. Kravtsova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 200-202. — Бібліогр.: 8 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The chemical etching of Ві₂Те₃ and n-(Ві₂Те₃)₀.₉(Sb₂Te₃)₀.₀₅(Sb₂Se₃)0.05 and p-
(Bi₂Te₃)₀.₂₅(Sb₂Te₃)₀.₇₂(Sb₂Se₃)₀.₀₃ crystals of solid solutions with HNO₃–HCl etchant
compositions was investigated. The dependences of dissolution rate of these
semiconductors on etchant composition, stirring, temperature and their shelf-time storage
have been studied. It was shown that the process of dissolution of the investigated
materials in the polishing solutions HNO₃–HCl is limited by the diffusion stages.
|
| first_indexed | 2025-12-07T16:18:38Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117719 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:18:38Z |
| publishDate | 2011 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Pavlovich, I.I. Tomashik, Z.F. Stratiychuk, I.B. Tomashik, V.M. Savchuk, O.A. Kravtsova, A.S. 2017-05-26T13:05:13Z 2017-05-26T13:05:13Z 2011 Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions / I.I. Pavlovich, Z.F. Tomashik, I.B. Stratiychuk, V.M. Tomashik, O.A. Savchuk, A.S. Kravtsova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 200-202. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 77.84.Bw, 81.65.Cf, Ps https://nasplib.isofts.kiev.ua/handle/123456789/117719 The chemical etching of Ві₂Те₃ and n-(Ві₂Те₃)₀.₉(Sb₂Te₃)₀.₀₅(Sb₂Se₃)0.05 and p-
 (Bi₂Te₃)₀.₂₅(Sb₂Te₃)₀.₇₂(Sb₂Se₃)₀.₀₃ crystals of solid solutions with HNO₃–HCl etchant
 compositions was investigated. The dependences of dissolution rate of these
 semiconductors on etchant composition, stirring, temperature and their shelf-time storage
 have been studied. It was shown that the process of dissolution of the investigated
 materials in the polishing solutions HNO₃–HCl is limited by the diffusion stages. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions Article published earlier |
| spellingShingle | Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions Pavlovich, I.I. Tomashik, Z.F. Stratiychuk, I.B. Tomashik, V.M. Savchuk, O.A. Kravtsova, A.S. |
| title | Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions |
| title_full | Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions |
| title_fullStr | Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions |
| title_full_unstemmed | Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions |
| title_short | Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions |
| title_sort | chemical-dynamic polishing of semiconductor materials based on bi and sb chalcogenides by using hno₃–hcl solutions |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117719 |
| work_keys_str_mv | AT pavlovichii chemicaldynamicpolishingofsemiconductormaterialsbasedonbiandsbchalcogenidesbyusinghno3hclsolutions AT tomashikzf chemicaldynamicpolishingofsemiconductormaterialsbasedonbiandsbchalcogenidesbyusinghno3hclsolutions AT stratiychukib chemicaldynamicpolishingofsemiconductormaterialsbasedonbiandsbchalcogenidesbyusinghno3hclsolutions AT tomashikvm chemicaldynamicpolishingofsemiconductormaterialsbasedonbiandsbchalcogenidesbyusinghno3hclsolutions AT savchukoa chemicaldynamicpolishingofsemiconductormaterialsbasedonbiandsbchalcogenidesbyusinghno3hclsolutions AT kravtsovaas chemicaldynamicpolishingofsemiconductormaterialsbasedonbiandsbchalcogenidesbyusinghno3hclsolutions |