Photoemission study of the electronic structure of praseodymium filled skutterudite (PrOs₄Sb₁₂)

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2011
• Hauptverfasser: Akinlami, J.O., Awobode, A.M.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117720
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Photoemission study of the electronic structure of praseodymium filled skutterudite (PrOs₄Sb₁₂) / J. O. Akinlami, A.M Awobode // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 237-240. — Бібліогр.: 19 назв. — англ.

Here we report the electronic structure of praseodymium filled skutterudite compound PrOs₄Sb₁₂. The theoretical photoemission spectrum (PES) at ћω = 21.2 eV shows four distinct structures peaking at about –0.2, –7.7, –13.7 and –18.2 eV. But on increasing the photon energy to 40.8 eV, the peak at –0....