Structural properties of nanocomposite SiO₂(Si) films obtained by ion-plasma sputtering and thermal annealing

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2011
• Main Authors: Bratus, O.L., Evtukh, A.A., Lytvyn, O.S., Voitovych, M.V., Yukhymchuk, V.О.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117723
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Structural properties of nanocomposite SiO₂(Si) films obtained by ion-plasma sputtering and thermal annealing / O.L. Bratus, A.A. Evtukh, O.S. Lytvyn, M.V. Voitovych, V.О. Yukhymchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 247-255. — Бібліогр.: 24 назв. — англ.

The nanocomposite SiO₂(Si) films containing Si nanoclusters inside insulating SiO₂matrix are promising for many nanoelectronics applications. The ion-plasma sputtering of Si in O₂ containing gas mixture and following thermal annealing have been used to form nanocomposite SiO₂(Si) films. The structur...