8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2013
• Автори: Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/117728
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: 8H-, 10H-, 14H-SiC formation
 in 6H-3C silicon carbide phase transitions / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 273-279. — Бібліогр.: 26 назв. — англ.

In this paper the results of photoluminescence researches devoted to phase
 transitions in 6H-3C-SiC have been presented. High pure 6H-SiC crystals grown by
 Tairov’s method with and without polytype joint before and after plastic deformation at
 high temperature annealing were investigated using optical spectroscopy. Low
 temperature photoluminescence changes in the transition phase of SiC crystal represented
 with the stalking fault spectra within the temperature range 4.2 to 35 K. The stalking
 fault spectra indicate formation of metastable nanostructures in SiC crystals (14H₁
 <4334>, 10H₂ <55>, 14H₂ <77>). The phononless part of each stalking fault spectrum
 consists of two components of radiative recombination that are responsible for hexagonal
 and cubic arrangement of atoms. Each of radiative recombination components in the
 stalking fault spectrum has the width of entire band 34 meV and shifts relative to each
 other by 26 meV. The overlap area of those components equals to 8 meV. The super-fine
 structure of the recombination components in spectrum is observed, and it is related to
 different Si – Si or C – C and Si – C bonds. Behavior of all the stalking fault spectra is
 similar (temperature, decay of luminescence). The processes of the phase transition are
 explained by the mechanism of interfacial rearrangements in the SiC crystals.