8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2013
• Main Authors: Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117728
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: 8H-, 10H-, 14H-SiC formation
 in 6H-3C silicon carbide phase transitions / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 273-279. — Бібліогр.: 26 назв. — англ.

In this paper the results of photoluminescence researches devoted to phase
 transitions in 6H-3C-SiC have been presented. High pure 6H-SiC crystals grown by
 Tairov’s method with and without polytype joint before and after plastic deformation at
 high temperature annealing we...