Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN
The temperature dependence of contact resistivity ρс of Ti-Al-TiB₂-Au ohmic
 contacts to n-GaN and effect of microwave treatment on ρс are investigated. The obtained
 dependences are described using a model of current flow via metal shunts associated
 with dislocations, the c...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2013 |
| ISSN: | 1560-8034 |
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117729 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Effect of microwave treatment on current flow mechanism in
 ohmic contacts to GaN / V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 280-284. — Бібліогр.: 14 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | The temperature dependence of contact resistivity ρс of Ti-Al-TiB₂-Au ohmic
contacts to n-GaN and effect of microwave treatment on ρс are investigated. The obtained
dependences are described using a model of current flow via metal shunts associated
with dislocations, the current being limited by diffusion supply of electrons. It is shown
that microwave treatment increases the dislocation density in the near-contact region of
contact structure and reduces the relative spread of resistivity values of contacts formed
on the wafer.
|
|---|---|
| ISSN: | 1560-8034 |