Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN
The temperature dependence of contact resistivity ρс of Ti-Al-TiB₂-Au ohmic contacts to n-GaN and effect of microwave treatment on ρс are investigated. The obtained dependences are described using a model of current flow via metal shunts associated with dislocations, the current being limited by...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2013 |
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117729 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN / V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 280-284. — Бібліогр.: 14 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-117729 |
|---|---|
| record_format |
dspace |
| spelling |
Sheremet, V.N. 2017-05-26T13:45:57Z 2017-05-26T13:45:57Z 2013 Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN / V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 280-284. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 73.40.Cg, Ns; 85.40.-e https://nasplib.isofts.kiev.ua/handle/123456789/117729 The temperature dependence of contact resistivity ρс of Ti-Al-TiB₂-Au ohmic contacts to n-GaN and effect of microwave treatment on ρс are investigated. The obtained dependences are described using a model of current flow via metal shunts associated with dislocations, the current being limited by diffusion supply of electrons. It is shown that microwave treatment increases the dislocation density in the near-contact region of contact structure and reduces the relative spread of resistivity values of contacts formed on the wafer. The author is indebted to research workers of the V. Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine – Prof. R.V. Konakova, Prof. A.V. Sachenko, Prof. L.A. Matveeva, Dr. V.G. Lyapin for fruitful consultations and interest in this work and researcher E.Yu. Kolyadina for measurement of radii of curvatures of the samples. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN |
| spellingShingle |
Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN Sheremet, V.N. |
| title_short |
Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN |
| title_full |
Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN |
| title_fullStr |
Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN |
| title_full_unstemmed |
Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN |
| title_sort |
effect of microwave treatment on current flow mechanism in ohmic contacts to gan |
| author |
Sheremet, V.N. |
| author_facet |
Sheremet, V.N. |
| publishDate |
2013 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The temperature dependence of contact resistivity ρс of Ti-Al-TiB₂-Au ohmic
contacts to n-GaN and effect of microwave treatment on ρс are investigated. The obtained
dependences are described using a model of current flow via metal shunts associated
with dislocations, the current being limited by diffusion supply of electrons. It is shown
that microwave treatment increases the dislocation density in the near-contact region of
contact structure and reduces the relative spread of resistivity values of contacts formed
on the wafer.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117729 |
| citation_txt |
Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN / V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 280-284. — Бібліогр.: 14 назв. — англ. |
| work_keys_str_mv |
AT sheremetvn effectofmicrowavetreatmentoncurrentflowmechanisminohmiccontactstogan |
| first_indexed |
2025-12-07T15:48:15Z |
| last_indexed |
2025-12-07T15:48:15Z |
| _version_ |
1850865085407297536 |