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Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN

The temperature dependence of contact resistivity ρс of Ti-Al-TiB₂-Au ohmic contacts to n-GaN and effect of microwave treatment on ρс are investigated. The obtained dependences are described using a model of current flow via metal shunts associated with dislocations, the current being limited by...

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Bibliographic Details
Published in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Date:	2013
Main Author:	Sheremet, V.N.
Format:	Article
Language:	English
Published:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
Online Access:	https://nasplib.isofts.kiev.ua/handle/123456789/117729
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Journal Title:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:	Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN / V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 280-284. — Бібліогр.: 14 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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