Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions

The scattering field gradient maps of surface layer magnetic domains in
 Y₂.₉₅La₀.₀₅Fe₅O₁₂ iron-yttrium garnet modified by high-dose ion implantation with
 nitrogen ions N+
 were obtained by the method of magnetic force microscopy. It was
 found that improving the ma...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2013
Hauptverfasser: Fodchuk, I.M., Gutsuliak, I.I., Zaplitniy, R.A., Balovsyak, S.V., Yaremiy, I.P., Bonchyk, O.Yu., Savitskiy, G.V., Syvorotka, I.M., Lytvyn, P.M.
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Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/117733
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Magnetic force microscopy of YLaFeO films implanted
 by high dose of nitrogen ions / І.M. Fodchuk, I.I. Gutsuliak, R.A. Zaplitniy, S.V. Balovsyak, І.P. Yaremiy, О.Yu. Bonchyk, G.V. Savitskiy, І.M. Syvorotka, P.M. Lytvyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 246-252. — Бібліогр.: 24 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Fodchuk, I.M.
Gutsuliak, I.I.
Zaplitniy, R.A.
Balovsyak, S.V.
Yaremiy, I.P.
Bonchyk, O.Yu.
Savitskiy, G.V.
Syvorotka, I.M.
Lytvyn, P.M.
author_facet Fodchuk, I.M.
Gutsuliak, I.I.
Zaplitniy, R.A.
Balovsyak, S.V.
Yaremiy, I.P.
Bonchyk, O.Yu.
Savitskiy, G.V.
Syvorotka, I.M.
Lytvyn, P.M.
citation_txt Magnetic force microscopy of YLaFeO films implanted
 by high dose of nitrogen ions / І.M. Fodchuk, I.I. Gutsuliak, R.A. Zaplitniy, S.V. Balovsyak, І.P. Yaremiy, О.Yu. Bonchyk, G.V. Savitskiy, І.M. Syvorotka, P.M. Lytvyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 246-252. — Бібліогр.: 24 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description The scattering field gradient maps of surface layer magnetic domains in
 Y₂.₉₅La₀.₀₅Fe₅O₁₂ iron-yttrium garnet modified by high-dose ion implantation with
 nitrogen ions N+
 were obtained by the method of magnetic force microscopy. It was
 found that improving the magnetic properties of thin films, which includes reducing the
 observed magnetic losses after high-dose implantation, is accompanied by essential
 ordering of magnetic domains on the surface of the implanted films. There is a direct
 dependence of the magnetic properties on the dose of implanted atoms, accompanied by
 a significant dispersion and amorphization of surface layer and formation of a clear
 magnetic structure.
first_indexed 2025-12-07T20:00:25Z
format Article
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id nasplib_isofts_kiev_ua-123456789-117733
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-12-07T20:00:25Z
publishDate 2013
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Fodchuk, I.M.
Gutsuliak, I.I.
Zaplitniy, R.A.
Balovsyak, S.V.
Yaremiy, I.P.
Bonchyk, O.Yu.
Savitskiy, G.V.
Syvorotka, I.M.
Lytvyn, P.M.
2017-05-26T13:55:26Z
2017-05-26T13:55:26Z
2013
Magnetic force microscopy of YLaFeO films implanted
 by high dose of nitrogen ions / І.M. Fodchuk, I.I. Gutsuliak, R.A. Zaplitniy, S.V. Balovsyak, І.P. Yaremiy, О.Yu. Bonchyk, G.V. Savitskiy, І.M. Syvorotka, P.M. Lytvyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 246-252. — Бібліогр.: 24 назв. — англ.
1560-8034
PACS 75.50.Gg
https://nasplib.isofts.kiev.ua/handle/123456789/117733
The scattering field gradient maps of surface layer magnetic domains in
 Y₂.₉₅La₀.₀₅Fe₅O₁₂ iron-yttrium garnet modified by high-dose ion implantation with
 nitrogen ions N+
 were obtained by the method of magnetic force microscopy. It was
 found that improving the magnetic properties of thin films, which includes reducing the
 observed magnetic losses after high-dose implantation, is accompanied by essential
 ordering of magnetic domains on the surface of the implanted films. There is a direct
 dependence of the magnetic properties on the dose of implanted atoms, accompanied by
 a significant dispersion and amorphization of surface layer and formation of a clear
 magnetic structure.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions
Article
published earlier
spellingShingle Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions
Fodchuk, I.M.
Gutsuliak, I.I.
Zaplitniy, R.A.
Balovsyak, S.V.
Yaremiy, I.P.
Bonchyk, O.Yu.
Savitskiy, G.V.
Syvorotka, I.M.
Lytvyn, P.M.
title Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions
title_full Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions
title_fullStr Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions
title_full_unstemmed Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions
title_short Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions
title_sort magnetic force microscopy of ylafeo films implanted by high dose of nitrogen ions
url https://nasplib.isofts.kiev.ua/handle/123456789/117733
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