Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2013
• Hauptverfasser: Fodchuk, I.M., Gutsuliak, I.I., Zaplitniy, R.A., Balovsyak, S.V., Yaremiy, I.P., Bonchyk, O.Yu., Savitskiy, G.V., Syvorotka, I.M., Lytvyn, P.M.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117733
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Magnetic force microscopy of YLaFeO films implanted
 by high dose of nitrogen ions / І.M. Fodchuk, I.I. Gutsuliak, R.A. Zaplitniy, S.V. Balovsyak, І.P. Yaremiy, О.Yu. Bonchyk, G.V. Savitskiy, І.M. Syvorotka, P.M. Lytvyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 246-252. — Бібліогр.: 24 назв. — англ.

The scattering field gradient maps of surface layer magnetic domains in
 Y₂.₉₅La₀.₀₅Fe₅O₁₂ iron-yttrium garnet modified by high-dose ion implantation with
 nitrogen ions N+
 were obtained by the method of magnetic force microscopy. It was
 found that improving the ma...