Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN
We studied ohmic contacts Au-Pd-Ti-Pd-n-AlN and Au-TiB₂-Al-Ti-n-GaN with contact resistivity ρс = 0.18cm² and 1.6 *10⁻⁴ Ω∙cm² , respectively, and the effect of microwave treatment on their electrophysical properties. After microwave treatment for time t up to 1000 s, the contact resistivity dr...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2013 |
| Main Authors: | , , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117734 |
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| Cite this: | Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN / A.E. Belyaev, N.S. Boltovets, Yu.V. Zhilyaev, V.S. Zhigunov, R.V. Konakova, V.N. Panteleev, A.V. Sachenko, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 289-292. — Бібліогр.: 14 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-117734 |
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Belyaev, A.E. Boltovets, N.S. Zhilyaev, Yu.V. Zhigunov, V.S. Konakova, R.V. Panteleev, V.N. Sachenko, A.V. Sheremet, V.N. 2017-05-26T14:02:41Z 2017-05-26T14:02:41Z 2013 Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN / A.E. Belyaev, N.S. Boltovets, Yu.V. Zhilyaev, V.S. Zhigunov, R.V. Konakova, V.N. Panteleev, A.V. Sachenko, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 289-292. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 73.40.Ns; 73.40.Cg, 85.40.-e https://nasplib.isofts.kiev.ua/handle/123456789/117734 We studied ohmic contacts Au-Pd-Ti-Pd-n-AlN and Au-TiB₂-Al-Ti-n-GaN with contact resistivity ρс = 0.18cm² and 1.6 *10⁻⁴ Ω∙cm² , respectively, and the effect of microwave treatment on their electrophysical properties. After microwave treatment for time t up to 1000 s, the contact resistivity dropped by 16% (60%) in the contact to AlN (GaN). This seems to result from increase of the number of structural defects in the semiconductor near-contact region caused by relaxation of intrinsic stresses induced by microwave radiation. This work was supported by the Project III-41-12. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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DSpace DC |
| title |
Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN |
| spellingShingle |
Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN Belyaev, A.E. Boltovets, N.S. Zhilyaev, Yu.V. Zhigunov, V.S. Konakova, R.V. Panteleev, V.N. Sachenko, A.V. Sheremet, V.N. |
| title_short |
Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN |
| title_full |
Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN |
| title_fullStr |
Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN |
| title_full_unstemmed |
Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN |
| title_sort |
effect of microwave radiation on i-v curves and contact resistivity of ohmic contacts to n-gan and n-aln |
| author |
Belyaev, A.E. Boltovets, N.S. Zhilyaev, Yu.V. Zhigunov, V.S. Konakova, R.V. Panteleev, V.N. Sachenko, A.V. Sheremet, V.N. |
| author_facet |
Belyaev, A.E. Boltovets, N.S. Zhilyaev, Yu.V. Zhigunov, V.S. Konakova, R.V. Panteleev, V.N. Sachenko, A.V. Sheremet, V.N. |
| publishDate |
2013 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
We studied ohmic contacts Au-Pd-Ti-Pd-n-AlN and Au-TiB₂-Al-Ti-n-GaN
with contact resistivity ρс = 0.18cm² and 1.6 *10⁻⁴ Ω∙cm² , respectively, and the effect
of microwave treatment on their electrophysical properties. After microwave treatment
for time t up to 1000 s, the contact resistivity dropped by 16% (60%) in the contact to
AlN (GaN). This seems to result from increase of the number of structural defects in the
semiconductor near-contact region caused by relaxation of intrinsic stresses induced by
microwave radiation.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117734 |
| citation_txt |
Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN / A.E. Belyaev, N.S. Boltovets, Yu.V. Zhilyaev, V.S. Zhigunov, R.V. Konakova, V.N. Panteleev, A.V. Sachenko, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 289-292. — Бібліогр.: 14 назв. — англ. |
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2025-12-01T23:43:57Z |
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2025-12-01T23:43:57Z |
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