Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN
We studied ohmic contacts Au-Pd-Ti-Pd-n-AlN and Au-TiB₂-Al-Ti-n-GaN
 with contact resistivity ρс = 0.18cm² and 1.6 *10⁻⁴ Ω∙cm² , respectively, and the effect
 of microwave treatment on their electrophysical properties. After microwave treatment
 for time t up to 1000 s, th...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2013 |
| Автори: | , , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117734 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Effect of microwave radiation on I-V curves and contact resistivity
 of ohmic contacts to n-GaN and n-AlN / A.E. Belyaev, N.S. Boltovets, Yu.V. Zhilyaev, V.S. Zhigunov, R.V. Konakova, V.N. Panteleev, A.V. Sachenko, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 289-292. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862653302801432576 |
|---|---|
| author | Belyaev, A.E. Boltovets, N.S. Zhilyaev, Yu.V. Zhigunov, V.S. Konakova, R.V. Panteleev, V.N. Sachenko, A.V. Sheremet, V.N. |
| author_facet | Belyaev, A.E. Boltovets, N.S. Zhilyaev, Yu.V. Zhigunov, V.S. Konakova, R.V. Panteleev, V.N. Sachenko, A.V. Sheremet, V.N. |
| citation_txt | Effect of microwave radiation on I-V curves and contact resistivity
 of ohmic contacts to n-GaN and n-AlN / A.E. Belyaev, N.S. Boltovets, Yu.V. Zhilyaev, V.S. Zhigunov, R.V. Konakova, V.N. Panteleev, A.V. Sachenko, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 289-292. — Бібліогр.: 14 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We studied ohmic contacts Au-Pd-Ti-Pd-n-AlN and Au-TiB₂-Al-Ti-n-GaN
with contact resistivity ρс = 0.18cm² and 1.6 *10⁻⁴ Ω∙cm² , respectively, and the effect
of microwave treatment on their electrophysical properties. After microwave treatment
for time t up to 1000 s, the contact resistivity dropped by 16% (60%) in the contact to
AlN (GaN). This seems to result from increase of the number of structural defects in the
semiconductor near-contact region caused by relaxation of intrinsic stresses induced by
microwave radiation.
|
| first_indexed | 2025-12-01T23:43:57Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117734 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-01T23:43:57Z |
| publishDate | 2013 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Belyaev, A.E. Boltovets, N.S. Zhilyaev, Yu.V. Zhigunov, V.S. Konakova, R.V. Panteleev, V.N. Sachenko, A.V. Sheremet, V.N. 2017-05-26T14:02:41Z 2017-05-26T14:02:41Z 2013 Effect of microwave radiation on I-V curves and contact resistivity
 of ohmic contacts to n-GaN and n-AlN / A.E. Belyaev, N.S. Boltovets, Yu.V. Zhilyaev, V.S. Zhigunov, R.V. Konakova, V.N. Panteleev, A.V. Sachenko, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 289-292. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 73.40.Ns; 73.40.Cg, 85.40.-e https://nasplib.isofts.kiev.ua/handle/123456789/117734 We studied ohmic contacts Au-Pd-Ti-Pd-n-AlN and Au-TiB₂-Al-Ti-n-GaN
 with contact resistivity ρс = 0.18cm² and 1.6 *10⁻⁴ Ω∙cm² , respectively, and the effect
 of microwave treatment on their electrophysical properties. After microwave treatment
 for time t up to 1000 s, the contact resistivity dropped by 16% (60%) in the contact to
 AlN (GaN). This seems to result from increase of the number of structural defects in the
 semiconductor near-contact region caused by relaxation of intrinsic stresses induced by
 microwave radiation. This work was supported by the Project III-41-12. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN Article published earlier |
| spellingShingle | Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN Belyaev, A.E. Boltovets, N.S. Zhilyaev, Yu.V. Zhigunov, V.S. Konakova, R.V. Panteleev, V.N. Sachenko, A.V. Sheremet, V.N. |
| title | Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN |
| title_full | Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN |
| title_fullStr | Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN |
| title_full_unstemmed | Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN |
| title_short | Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN |
| title_sort | effect of microwave radiation on i-v curves and contact resistivity of ohmic contacts to n-gan and n-aln |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117734 |
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