Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2013
• Main Authors: Belyaev, A.E., Boltovets, N.S., Zhilyaev, Yu.V., Zhigunov, V.S., Konakova, R.V., Panteleev, V.N., Sachenko, A.V., Sheremet, V.N.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117734
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN / A.E. Belyaev, N.S. Boltovets, Yu.V. Zhilyaev, V.S. Zhigunov, R.V. Konakova, V.N. Panteleev, A.V. Sachenko, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 289-292. — Бібліогр.: 14 назв. — англ.

We studied ohmic contacts Au-Pd-Ti-Pd-n-AlN and Au-TiB₂-Al-Ti-n-GaN with contact resistivity ρс = 0.18cm² and 1.6 *10⁻⁴ Ω∙cm² , respectively, and the effect of microwave treatment on their electrophysical properties. After microwave treatment for time t up to 1000 s, the contact resistivity dr...