On features of crystal structure of semiconductor-ferroelectric Ag₃AsS₃
The temperature dependences of the unit cell parameters a(T) and c(T) of
 Ag₃AsS₃ were measured by the X-ray dilatometry method with high precision within the
 temperature range 100 to 300 K in the dark mode and under laser irradiation (λ =
 532 nm). It was found that the...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2013 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117735 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | On features of crystal structure of semiconductor-ferroelectric Ag₃AsS₃ / N. Borovoy, Yu. Gololobov, G. Isaienko, A. Salnik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 293-296. — Бібліогр.: 12 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862675722596777984 |
|---|---|
| author | Borovoy, N. Gololobov, Yu. Isaienko, G. Salnik, A. |
| author_facet | Borovoy, N. Gololobov, Yu. Isaienko, G. Salnik, A. |
| citation_txt | On features of crystal structure of semiconductor-ferroelectric Ag₃AsS₃ / N. Borovoy, Yu. Gololobov, G. Isaienko, A. Salnik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 293-296. — Бібліогр.: 12 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The temperature dependences of the unit cell parameters a(T) and c(T) of
Ag₃AsS₃ were measured by the X-ray dilatometry method with high precision within the
temperature range 100 to 300 K in the dark mode and under laser irradiation (λ =
532 nm). It was found that the parameter c increases almost linear with decreasing the
temperature from 300 down to 100 K for samples in the dark. At the same time, for
samples that were exposed during cooling to laser irradiation, the increase of the
parameter с by the value ∆c ≈ (0.002…0.003) Å is observed at temperatures Tp =
145…147 K. This leap is typical for systems in which a phase transition of the first order
occurs. Furthermore, there were investigated temperature dependences of the integral
relative intensity I(T) of main structural maxima of Ag₃AsS₃ both in the dark mode and
under laser irradiation. It was established the character of the dependence I(T) for these
reflexes was changed significantly by laser irradiation.
|
| first_indexed | 2025-12-07T15:40:54Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117735 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:40:54Z |
| publishDate | 2013 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Borovoy, N. Gololobov, Yu. Isaienko, G. Salnik, A. 2017-05-26T14:08:56Z 2017-05-26T14:08:56Z 2013 On features of crystal structure of semiconductor-ferroelectric Ag₃AsS₃ / N. Borovoy, Yu. Gololobov, G. Isaienko, A. Salnik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 293-296. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS 61.50.Ks, 77.80.Bh https://nasplib.isofts.kiev.ua/handle/123456789/117735 The temperature dependences of the unit cell parameters a(T) and c(T) of
 Ag₃AsS₃ were measured by the X-ray dilatometry method with high precision within the
 temperature range 100 to 300 K in the dark mode and under laser irradiation (λ =
 532 nm). It was found that the parameter c increases almost linear with decreasing the
 temperature from 300 down to 100 K for samples in the dark. At the same time, for
 samples that were exposed during cooling to laser irradiation, the increase of the
 parameter с by the value ∆c ≈ (0.002…0.003) Å is observed at temperatures Tp =
 145…147 K. This leap is typical for systems in which a phase transition of the first order
 occurs. Furthermore, there were investigated temperature dependences of the integral
 relative intensity I(T) of main structural maxima of Ag₃AsS₃ both in the dark mode and
 under laser irradiation. It was established the character of the dependence I(T) for these
 reflexes was changed significantly by laser irradiation. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics On features of crystal structure of semiconductor-ferroelectric Ag₃AsS₃ Article published earlier |
| spellingShingle | On features of crystal structure of semiconductor-ferroelectric Ag₃AsS₃ Borovoy, N. Gololobov, Yu. Isaienko, G. Salnik, A. |
| title | On features of crystal structure of semiconductor-ferroelectric Ag₃AsS₃ |
| title_full | On features of crystal structure of semiconductor-ferroelectric Ag₃AsS₃ |
| title_fullStr | On features of crystal structure of semiconductor-ferroelectric Ag₃AsS₃ |
| title_full_unstemmed | On features of crystal structure of semiconductor-ferroelectric Ag₃AsS₃ |
| title_short | On features of crystal structure of semiconductor-ferroelectric Ag₃AsS₃ |
| title_sort | on features of crystal structure of semiconductor-ferroelectric ag₃ass₃ |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117735 |
| work_keys_str_mv | AT borovoyn onfeaturesofcrystalstructureofsemiconductorferroelectricag3ass3 AT gololobovyu onfeaturesofcrystalstructureofsemiconductorferroelectricag3ass3 AT isaienkog onfeaturesofcrystalstructureofsemiconductorferroelectricag3ass3 AT salnika onfeaturesofcrystalstructureofsemiconductorferroelectricag3ass3 |