Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs

Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs

The charge coupling between the gate and substrate is a fundamental property of any fully-depleted silicon-on-insulator (SOI) MOS transistor, which manifests itself as a dependence of electrical characteristics at one Si film/dielectric interface on charges at the opposite interface and opposite...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2013
Main Authors: Rudenko, T., Nazarov, A., Kilchytska, V., Flandre, D., Popov, V., Ilnitsky, M., Lysenko, V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/117737
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs / T. Rudenko, A. Nazarov, V. Kilchytska, D. Flandre, V. Popov, M. Ilnitsky, and V. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 300-309. — Бібліогр.: 23 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-117737
record_format dspace
spelling Rudenko, T.
Nazarov, A.
Kilchytska, V.
Flandre, D.
Popov, V.
Ilnitsky, M.
Lysenko, V.
2017-05-26T14:23:17Z
2017-05-26T14:23:17Z
2013
Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs / T. Rudenko, A. Nazarov, V. Kilchytska, D. Flandre, V. Popov, M. Ilnitsky, and V. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 300-309. — Бібліогр.: 23 назв. — англ.
1560-8034
PACS 85.30.Tv
https://nasplib.isofts.kiev.ua/handle/123456789/117737
The charge coupling between the gate and substrate is a fundamental property of any fully-depleted silicon-on-insulator (SOI) MOS transistor, which manifests itself as a dependence of electrical characteristics at one Si film/dielectric interface on charges at the opposite interface and opposite gate bias. Traditionally, gate-to-substrate coupling in SOI MOS transistors is described by the classical Lim-Fossum model. However, in the case of SOI MOS transistors with ultra-thin silicon bodies, significant deviations from this model are observed. In this paper, the behavior of gate coupling in SOI MOS structures with ultra-thin silicon films and ultra-thin gate dielectrics is studied and analyzed using experimental data and one-dimensional numerical simulations in classical and quantum-mechanical modes. It is shown that in these advanced transistor structures, coupling characteristics (dependences of the front- and back-gate threshold voltages on the opposite gate bias) feature a larger slope and much wider (more than doubled) linear region than that predicted by the Lim-Fossum model. These differences originate from both electrostatic and quantization effects. A simple analytical model taking into account these effects and being in good agreement with numerical simulations and experimental results is proposed.
This work was supported by NAS of Ukraine (the project No. 39-02-13). The authors wish to thank CEALETI for the provided UTB SOI devices.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs
spellingShingle Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs
Rudenko, T.
Nazarov, A.
Kilchytska, V.
Flandre, D.
Popov, V.
Ilnitsky, M.
Lysenko, V.
title_short Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs
title_full Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs
title_fullStr Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs
title_full_unstemmed Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs
title_sort revision of interface coupling in ultra-thin body silicon-on-insulator mosfets
author Rudenko, T.
Nazarov, A.
Kilchytska, V.
Flandre, D.
Popov, V.
Ilnitsky, M.
Lysenko, V.
author_facet Rudenko, T.
Nazarov, A.
Kilchytska, V.
Flandre, D.
Popov, V.
Ilnitsky, M.
Lysenko, V.
publishDate 2013
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description The charge coupling between the gate and substrate is a fundamental property of any fully-depleted silicon-on-insulator (SOI) MOS transistor, which manifests itself as a dependence of electrical characteristics at one Si film/dielectric interface on charges at the opposite interface and opposite gate bias. Traditionally, gate-to-substrate coupling in SOI MOS transistors is described by the classical Lim-Fossum model. However, in the case of SOI MOS transistors with ultra-thin silicon bodies, significant deviations from this model are observed. In this paper, the behavior of gate coupling in SOI MOS structures with ultra-thin silicon films and ultra-thin gate dielectrics is studied and analyzed using experimental data and one-dimensional numerical simulations in classical and quantum-mechanical modes. It is shown that in these advanced transistor structures, coupling characteristics (dependences of the front- and back-gate threshold voltages on the opposite gate bias) feature a larger slope and much wider (more than doubled) linear region than that predicted by the Lim-Fossum model. These differences originate from both electrostatic and quantization effects. A simple analytical model taking into account these effects and being in good agreement with numerical simulations and experimental results is proposed.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/117737
citation_txt Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs / T. Rudenko, A. Nazarov, V. Kilchytska, D. Flandre, V. Popov, M. Ilnitsky, and V. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 300-309. — Бібліогр.: 23 назв. — англ.
work_keys_str_mv AT rudenkot revisionofinterfacecouplinginultrathinbodysilicononinsulatormosfets
AT nazarova revisionofinterfacecouplinginultrathinbodysilicononinsulatormosfets
AT kilchytskav revisionofinterfacecouplinginultrathinbodysilicononinsulatormosfets
AT flandred revisionofinterfacecouplinginultrathinbodysilicononinsulatormosfets
AT popovv revisionofinterfacecouplinginultrathinbodysilicononinsulatormosfets
AT ilnitskym revisionofinterfacecouplinginultrathinbodysilicononinsulatormosfets
AT lysenkov revisionofinterfacecouplinginultrathinbodysilicononinsulatormosfets
first_indexed 2025-12-07T20:01:03Z
last_indexed 2025-12-07T20:01:03Z
_version_ 1850880990894882816

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