Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs
The charge coupling between the gate and substrate is a fundamental property
 of any fully-depleted silicon-on-insulator (SOI) MOS transistor, which manifests itself as
 a dependence of electrical characteristics at one Si film/dielectric interface on charges at
 the opposite...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2013 |
| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117737 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Revision of interface coupling in ultra-thin body
 silicon-on-insulator MOSFETs / T. Rudenko, A. Nazarov, V. Kilchytska, D. Flandre, V. Popov, M. Ilnitsky, and V. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 300-309. — Бібліогр.: 23 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862737813694316544 |
|---|---|
| author | Rudenko, T. Nazarov, A. Kilchytska, V. Flandre, D. Popov, V. Ilnitsky, M. Lysenko, V. |
| author_facet | Rudenko, T. Nazarov, A. Kilchytska, V. Flandre, D. Popov, V. Ilnitsky, M. Lysenko, V. |
| citation_txt | Revision of interface coupling in ultra-thin body
 silicon-on-insulator MOSFETs / T. Rudenko, A. Nazarov, V. Kilchytska, D. Flandre, V. Popov, M. Ilnitsky, and V. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 300-309. — Бібліогр.: 23 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The charge coupling between the gate and substrate is a fundamental property
of any fully-depleted silicon-on-insulator (SOI) MOS transistor, which manifests itself as
a dependence of electrical characteristics at one Si film/dielectric interface on charges at
the opposite interface and opposite gate bias. Traditionally, gate-to-substrate coupling in
SOI MOS transistors is described by the classical Lim-Fossum model. However, in the
case of SOI MOS transistors with ultra-thin silicon bodies, significant deviations from
this model are observed. In this paper, the behavior of gate coupling in SOI MOS
structures with ultra-thin silicon films and ultra-thin gate dielectrics is studied and
analyzed using experimental data and one-dimensional numerical simulations in classical
and quantum-mechanical modes. It is shown that in these advanced transistor structures,
coupling characteristics (dependences of the front- and back-gate threshold voltages on
the opposite gate bias) feature a larger slope and much wider (more than doubled) linear
region than that predicted by the Lim-Fossum model. These differences originate from
both electrostatic and quantization effects. A simple analytical model taking into account
these effects and being in good agreement with numerical simulations and experimental
results is proposed.
|
| first_indexed | 2025-12-07T20:01:03Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117737 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:01:03Z |
| publishDate | 2013 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Rudenko, T. Nazarov, A. Kilchytska, V. Flandre, D. Popov, V. Ilnitsky, M. Lysenko, V. 2017-05-26T14:23:17Z 2017-05-26T14:23:17Z 2013 Revision of interface coupling in ultra-thin body
 silicon-on-insulator MOSFETs / T. Rudenko, A. Nazarov, V. Kilchytska, D. Flandre, V. Popov, M. Ilnitsky, and V. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 300-309. — Бібліогр.: 23 назв. — англ. 1560-8034 PACS 85.30.Tv https://nasplib.isofts.kiev.ua/handle/123456789/117737 The charge coupling between the gate and substrate is a fundamental property
 of any fully-depleted silicon-on-insulator (SOI) MOS transistor, which manifests itself as
 a dependence of electrical characteristics at one Si film/dielectric interface on charges at
 the opposite interface and opposite gate bias. Traditionally, gate-to-substrate coupling in
 SOI MOS transistors is described by the classical Lim-Fossum model. However, in the
 case of SOI MOS transistors with ultra-thin silicon bodies, significant deviations from
 this model are observed. In this paper, the behavior of gate coupling in SOI MOS
 structures with ultra-thin silicon films and ultra-thin gate dielectrics is studied and
 analyzed using experimental data and one-dimensional numerical simulations in classical
 and quantum-mechanical modes. It is shown that in these advanced transistor structures,
 coupling characteristics (dependences of the front- and back-gate threshold voltages on
 the opposite gate bias) feature a larger slope and much wider (more than doubled) linear
 region than that predicted by the Lim-Fossum model. These differences originate from
 both electrostatic and quantization effects. A simple analytical model taking into account
 these effects and being in good agreement with numerical simulations and experimental
 results is proposed. This work was supported by NAS of Ukraine (the
 project No. 39-02-13). The authors wish to thank CEALETI
 for the provided UTB SOI devices. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs Article published earlier |
| spellingShingle | Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs Rudenko, T. Nazarov, A. Kilchytska, V. Flandre, D. Popov, V. Ilnitsky, M. Lysenko, V. |
| title | Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs |
| title_full | Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs |
| title_fullStr | Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs |
| title_full_unstemmed | Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs |
| title_short | Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs |
| title_sort | revision of interface coupling in ultra-thin body silicon-on-insulator mosfets |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117737 |
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