Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2013
• Main Authors: Rudenko, T., Nazarov, A., Kilchytska, V., Flandre, D., Popov, V., Ilnitsky, M., Lysenko, V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117737
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Revision of interface coupling in ultra-thin body
 silicon-on-insulator MOSFETs / T. Rudenko, A. Nazarov, V. Kilchytska, D. Flandre, V. Popov, M. Ilnitsky, and V. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 300-309. — Бібліогр.: 23 назв. — англ.

The charge coupling between the gate and substrate is a fundamental property
 of any fully-depleted silicon-on-insulator (SOI) MOS transistor, which manifests itself as
 a dependence of electrical characteristics at one Si film/dielectric interface on charges at
 the opposite...