Intrinsic defects in nonstoichiometric B-SiC nanoparticles studied by pulsed magnetic resonance methods

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2010
• Hauptverfasser: Savchenko, D.V., Pöppl, A., Kalabukhova, E.N., Venger, E.F., Gadzira, M.P., Gnesin, G.G.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117738
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Intrinsic defects in nonstoichiometric B-SiC nanoparticles studied by pulsed magnetic resonance methods/ D.V. Savchenko, A. Pöppl, E.N. Kalabukhova, E.F. Venger, M.P. Gadzira, G.G. Gnesin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 43-50. — Бібліогр.: 25 назв. — англ.

Nonstoichiometric B-SiC nanoparticles (np-SiC) have been studied by electron
 paramagnetic resonance (EPR) and pulsed magnetic resonance methods including field
 swept electron spin echo (FS ESE), pulsed electron nuclear double resonance (ENDOR)
 and hyperfine sublevel correl...