Radiative recombination in initial and electron-irradiated GaP crystals
Photoluminescence of GaP crystals irradiated by 1 MeV electrons was studied
 at 4.2 K. Samples were prepared using various technologies and doped by Te, Zn, Mg
 and N. Emission spectra were analyzed as dependent on the impurity content. Found was the electron irradiation influence on...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Cite this: | Radiative recombination in initial and electron-irradiated GaP crystals / O. Hontaruk, O. Konoreva, P. Litovchenko, V. Manzhara, V. Opilat, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 30-35. — Бібліогр.: 24 назв. — англ. |
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| author | Hontaruk, O. Konoreva, O. Litovchenko, P. Manzhara, V. Opilat, V. Pinkovska, M. Tartachnyk, V. |
| author_facet | Hontaruk, O. Konoreva, O. Litovchenko, P. Manzhara, V. Opilat, V. Pinkovska, M. Tartachnyk, V. |
| citation_txt | Radiative recombination in initial and electron-irradiated GaP crystals / O. Hontaruk, O. Konoreva, P. Litovchenko, V. Manzhara, V. Opilat, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 30-35. — Бібліогр.: 24 назв. — англ. |
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| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Photoluminescence of GaP crystals irradiated by 1 MeV electrons was studied
at 4.2 K. Samples were prepared using various technologies and doped by Te, Zn, Mg
and N. Emission spectra were analyzed as dependent on the impurity content. Found was the electron irradiation influence on the luminescence intensity and its mechanism.
Radiative recombination intensity was shown to recover efficiently within the
temperature range 200-600 ºC, and the main annealing stage being at 200-400 ºC.
|
| first_indexed | 2025-12-07T16:52:09Z |
| format | Article |
| fulltext |
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010. V. 13, N 1. P. 30-35.
© 2010, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
30
PACS 29.40.-n, 85.30.-z, 85.60.Dw
Radiative recombination in initial
and electron-irradiated GaP crystals
O. Hontaruk1, O. Konoreva1, P. Litovchenko1, V. Manzhara1, V. Opilat2, M. Pinkovska1, V. Tartachnyk1
1Institute for Nuclear Research, NAS of Ukraine, 47, prospect Nauky, 03028 Kyiv, Ukraine
2M. Drahomanov National Pedagogical University, 9, Pirohova str., 01601 Kyiv, Ukraine
Corresponding author phone: (+044)-525-39-97; e-mail: okskon@meta.ua
Abstract. Photoluminescence of GaP crystals irradiated by 1 MeV electrons was studied
at 4.2 K. Samples were prepared using various technologies and doped by Te, Zn, Mg
and N. Emission spectra were analyzed as dependent on the impurity content. Found was
the electron irradiation influence on the luminescence intensity and its mechanism.
Radiative recombination intensity was shown to recover efficiently within the
temperature range 200-600 ºC, and the main annealing stage being at 200-400 ºC.
Keywords: GaP, photoluminescence, recombination, degradation.
Manuscript received 01.10.09; accepted for publication 22.10.09; published online 04.12.09.
1. Introduction
The researches of structural defects in GaP
monocrystals, which started at the end of 60-ths, are still
far from the completion. The number of published works
concerning these problems increases rapidly; many of
them deal with radiation-induced lattice defects [1-9].
In recent years, the interest to these materials
reinstates because of the increase in the field of GaP
oscillators (emitters) application. Light emitting
structures, used earlier only as active elements in
optoelectronics industry, has become high sensitive
thermometers, detectors, high temperature diodes [7-9].
From the viewpoint of examination of variety
radiative recombination mechanisms, one can consider
GaP crystals to be the model ones. Due to the great
oscillator strength and the low depth of the trap, namely
isovalent nitrogen impurity, the emitting source with the
quantum energy close to the forbidden gap might be
obtained. The green band of the visible spectrum
responds to such transition. In homogeneous crystals
without dislocations, the band of a free exciton with
series of the phonon reiteration can also exist.
Intentionally doped crystals show a donor-acceptor pair
emission [10-11].
So, a luminescence spectrum of high pure crystals
is known enough [12-14]; but the origin of main bands
of GaP and materials on its base, exploitable in
electronic industry, are not yet resolved and need
subsequent study.
2. Experiment
Optical characteristics are known to be highly sensitive to
the lattice defects, that is why we used them in our
investigations. Samples were made by different
technologies: by Czochralski method, from solution-
melting and epitaxy. Te-, Zn-, Mg- and N-doped crystals
were irradiated at electron accelerator ELТ-1.5 with
electrons at the temperatures not higher than the room
ones. The electron energy was 1 MeV. Photo-
luminescence of the samples was measured at 4.2 K.
Excitation was carried out by a quartz lamp through the
water filter. Radiation induced suppression of
luminescence and the influence of thermal annealing were
studied. The origin of emission mechanisms is discussed.
3. Results and discussion
Electroluminescence characteristics of various samples
at 4.2 K are shown below.
Fig. 1 presents spectra of undoped n-type CZ GaP
with three broad structureless bands at 2.174, 2.224 and
2.28 eV.
Considering the value of GaP forbidden gap energy
2.34 eV (4.2 K), one can evaluate the depth of the level
responding to the emitting transition 2.28 eV. A donor
with the energy Ed = 0.06 eV might be such a trap. This
value is close to the ionizing energy of uncontrolled Sn
impurity (0.058 eV) [15]. As its concentration is not
high, the band intensity is low.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010. V. 13, N 1. P. 30-35.
© 2010, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
31
2.13 2.15 2.17 2.19 2.212.112.092.072.052.032.01 2.23
Energy, Vе
In
te
n
si
ty
,
a
rb
.
u
n
its 1
2
Fig. 3. Luminescence spectra of GaP made by the liquid
epitaxy method at 4.2 K: 1 – initial, 2 – after electron
irradiation (Ee = 1 MeV, Ф = 1014 cm–2).
2.13 2.15 2.17 2.19 2.21 2.23 2.25 2.27 2.29
In
te
n
si
ty
,
ar
b
.
u
n
its
hν=2.174еV
hν=2.224еV
hν=2.28еV
Energy, eV
2.11
Fig. 1. Luminescence spectrum of undoped n-type CZ GaP at
4.2 K.
The origin of the transition at hν2 = 2.224 eV is
probably related with donor-acceptor transitions. If the
emitted quantum energy is
E
r
e
EEEh adg
2
, (1)
with Eg is the forbidden band width; Ed, Ea – energies of
donor and acceptor levels, accordingly; r – distance
between atoms; – dielectric permittivity;
6
52
r
be
E
, 0
515.6 ab , (2)
where a0 is the Bohr radius of carriers with a higher
bond energy [1].
Then, in the case r → ∞
adg EEEh . (3)
When undoped GaP possesses uncontrolled Zn
impurity (EZn = 0.064 eV), the intensity maximum of far
laying pairs is 2.218 eV; this value is close to hν2. The
difference between experimental and calculated data is
explained by the band maximum dependence
hν2 = 2.224 eV on the concentration of donor-acceptor
pairs.
So, we consider the second band is the
superposition of discrete emitting lines of donor-
acceptor Sn–Zn pairs separated by long distances.
The low-energy maximum hν = 2.17 eV is the most
probably formed by phonon reiteration of the main band
maximum. They differ by the distance that equals to the
GaP photon energy (45 meV).
The absence of the fine structure of pair emitting
even at 4.2 K testifies about a high content of defects in
undoped GaP.
In Mg-doped CaP (Fig. 2) an additional emitting
band hν2 = 2.296 eV appears, which is identified as the
transition onto the 0.044 eV level located near the
valence band top. This value is close to Mg acceptor
impurity energy (0.052 eV) [15].
2.332.172.13 2.19 2.21 2.23 2.25 2.27 2.29 2.312.11
In
te
n
si
ty
,a
rb
un
its
.
h =2.296 Vν е
2.15
Energy, eV
2.09
Fig. 2. Luminescence spectrum of Mg doped GaP at
4.2 K.
In Zn-doped p-type GaP, in addition to the main
band maximum 2.218 eV the band hν = 2.280 eV
appears, which is related with the emitting transition
onto the acceptor level 0.060 eV. The latter is probably
related to Zn, as EZn value coincides with known lines
within the range 0.064–0.617 eV [10, 15].
Epitaxial GaP of n-type displaces broad
structureless band with the maximum close to 2.153 eV
(Fig. 3). This value coincides with the envelope of peak
series for the phonon reiteration of the NN lines found in
[16] by studying the GaP:N diodes. So, green emitting
band in epitaxial GaP is also caused by N impurity and
has excitonic nature.
In GaP crystal grown from solution-melting, a fine
structure appears in the emission spectrum (Fig. 4).
The origin of main lines was studied in the classical
Gershenson research [17] as well as in other works [18-
19]. As it was already shown, different A-, B-, C-lines
are splitted in magnetic field, which is indicative of the
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010. V. 13, N 1. P. 30-35.
© 2010, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
32
exciton emission origin [17]. The first and the second
lines are doubling components with the distance in
maxima 10–4 eV. A- and B-lines are related with direct
excitons bounded on the ionized center, while C-line is
the result of annihilation with the indirect exciton
located on a neutral donor.
Emission spectra of two GaP solution-melting
grown samples with the purity higher than in the
previous case are given in Figs 5a,b (a – the most pure
crystal, b – medium, Fig. 4 – the worst). The maximum
of the narrow line with the highest intensity (D-line) at
2.337 eV evidently responds to the free exciton
emission. The nearest adjoining line 2.331 eV is 6 meV
lower than D-line, and one could identify it with the D-
TA phonon reiteration (TA = 8.2 meV). But in the
medium purity crystal, it is the main line in the spectrum
(Fig. 5b), so we can consider its origin as caused by the
recombination of exciton located on uncontrolled
impurity.
Izoelectron N impurity in GaP is highly
electronegative. While joining the electron, nitrogen
becomes the charge center and attracts a hole, associated
with G-maximum of the valence band.
Then indirect exciton is formed with the radius
stemming from the equation
B
r a
m
m
a
1
0
ex
, (4)
where m0 is the free electron mass, mr – specific mass,
аВ = 0.53 Å (aB – Bohr radius).
If = 11.11 in GaP, then aex = 17 Ǻ and responds
to mr/m0 = 0.346, which means that we deal with the
exciton of large radius, namely the Wannier exciton.
Its bond energy on an isolated atom is
approximately equal to 21 meV [11], and emission
energy is 2.319 eV.
In the spectra of both samples, the line of excitons
bounded to a nitrogen atom is denoted as N-line. The
rest lines in the fine structure are the phonon reiteration
of the free exciton as well as the exciton bounded to
uncontrolled unknown impurity and nitrogen.
In
te
n
si
ty
,
ar
b
.
u
ni
ts
2.132.11 2.15 2.17 2.19 2.21 2.23 2.25 2.27 2.29 2.332.31
Е ,еnergy V
А
ВС
Fig. 4. Luminescence spectrum of GaP made by the solution-
melting method at 4.2 K.
h
=
2
.3
31
V
ν
е
2.19 2.21 2.23 2.27 2.29 2.31 2.33 2.35
Е еnergy, V
In
te
ns
ity
,
a
rb
.u
n
its
2.25
D
N
a
h =2.331 Vν е
2.192.172.15 2.21 2.23 2.25 2.27 2.29 2.31 2.33
Е , еnergy V
In
te
n
si
ty
,
ar
b
.
u
n
its
N
b
Fig. 5. Luminescence spectra at 4.2 K of GaP made by liquid
epitaxy method with different crystal purity: a – the higher
purity level than b.
Irradiation of these samples by 1 MeV electrons with
the dose 1014 cm–2 leads to the intensity decrease in all the
lines: by 2.82 times for free excitons and 3.11, 5.46 and
3.09 times for A-, B- and C-lines, accordingly. The C-line
appears to be the most sensitive to radiation and has the
lower temperature stability, as its origin is related with
forbidden direct transitions [17]. It is probably the result
of annihilation of excitons weekly bounded to the
impurity center. C-line, in contrast with two others, is a
result of its localization on neutral atom. The authors [17]
proposed Si as playing the role of this center. But
considering the close energy position of C-line (2.310 eV)
and nitrogen (2.318 eV) and the same emission
mechanism as the result of annihilation of indirect bond
exciton, we concluded that N-line of our GaP spectra and
C-line in [17] are identical. Nearly the same radiation
hardness of this line with free and bond exciton lines is an
additional confirmation of its exciton origin.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010. V. 13, N 1. P. 30-35.
© 2010, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
33
The spectrum of the epitaxially grown GaP
irradiated with electrons (curve 2, electron fluence
1014 cm–2) is given in Fig. 3 together with the initial one
(curve 1). In comparison with the crystal prepared using
the solution-melting, the decrease of the emission
intensity after electron irradiation is much less (by 1.3
times) despite the same recombination mechanism. It is
related with different concentrations of initial structural
defects in both technologies. The velocity of
incorporation of radiation defects into semiconductor
depends on the Fermi level position inside the forbidden
gap Eg and decreases, while the Fermi level moves to the
middle of Eg. In the compensated material, this velocity
is less, so the crystal prepared from solution-melting is
more perfect than GaP epitaxial films.
The position of main emission maximum also
testifies to this assumption. In the irradiated GaP sample,
the intensity maximum shifts to the lower quantum
energy by 0.005 eV, while in the epitaxial material – this
shift is 0.034 eV from the emission maximum in the
solution-melting grown crystal. Fields of structural
defects influence on far NN-pairs, bond energy in which
is less than that in the nearest pairs. So, the radiation
sensitivity of maximum band intensity is the greatest
(increases 10 times at the fluence 1014 cm–2).
Initial Mg-doped GaP is sufficiently defective, so
even for the greater fluence (5×1014 cm–2)
photoluminescence intensity drops only by 2.36 times.
CZ grown undoped GaP has the same radiation
tolerance, as its low quantum yield is caused by the high
dislocation density.
5
10
15
100 200 300 400 500 6000
In
te
n
si
ty
,
a
rb
u
n
its
.
Annealing temperature,оС
1
2
Fig. 6. Restoring the emission characteristics in GaP
previously irradiated by 1 MeV electrons (Ф = 1014 cm–2): 1)
samples grown by solution-melting; 2) GaP doped by Mg.
After irradiation, GaP crystals were annealed. In
GaP samples grown by solution-melting, restoring the
emission characteristics in the process of heating begins
after 100 C. The curve main band maximum increases
slowly to 400 C, after that sharp restoring stage occurs
within the 400-500 C temperature range. Heating over
600 C causes opposite processes – the luminescence
intensity begins to decrease (Fig. 6).
Mg-doped GaP crystal anneals slowly; the intensity
increase even at 600 C is nearly an order less than for
the samples grown by solution-melting. The same
behavior is typical for CZ grown GaP.
Concerning the fine structure of GaP grown by
solution-melting, its restoring after irradiation begins at
200 C: in the annealed samples the free exciton line
appears at 400 C again together with LO-background
reiteration (Fig. 7). Nearby there is the series of close
laying lines with the 2.5 eV mean distance between
them. The most intensive lines are the background
reiteration of a free exciton line. The weakest ones
between background replica might respond to exciton
annihilation from the excited state with participation of
phonons. When considering the transition from the
nearest state n = 2 into n = 3 and use experimental value
Eex = 11 meV, then following relation may be written
222
4*
ex
1
2 nh
qm
E e
,
where q – electron charge, h – Planck’s constant, n –
quantum number (n 1).
The difference between two exciton excited states
Δ1 = 1.53 meV. In the mentioned region of the fine
structure, the mean distance between lines is equal
Δ2 = 1.53 meV, which confirms our conclusion.
When annealing temperature increases to 500 ºC,
the intensity of all the lines increases with some step in
the longwave side (M-line in Fig. 8). The further heating
at 700 ºC causes degradation of emission in all parts of
the spectrum due to thermal effects [24].
Е , еnergy V
2.192.152.11 2.23 2.27 2.31
In
te
n
si
ty
,
a
rb
.
u
n
its
N
Fig. 7. Luminescence spectrum of GaP made by the solution-
melting method at 4.2 K. Irradiated samples were annealed at
400 C.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010. V. 13, N 1. P. 30-35.
© 2010, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
34
2.09 2.13 2.17 2.21 2.25 2.29 2.33
Е , еnergy V
In
te
ns
ity
,
a
rb
.
u
n
its
M
Fig. 8. Luminescence spectrum of GaP made by the solution-
melting method at 4.2 K. Irradiated samples were annealed at
500 C.
GaP is a semiconductor widely used in
optoelectronics, so its radiation hardness is determined
as emitting capacity and optical absorption. It is clear
from experiments that degradation of emission begins at
the fluence Ф = 1014 cm–2: at Ф = 5×1014 cm–2 exciton
spectra are fully destroyed, while in near-edge optical
absorption this degradation occurs at Ф ≈ 1014 cm–2 [14].
That is, the exciton spectrum component is much more
sensitive to ionizing radiation than the optical one in the
region of fundamental transitions. This difference is
caused by the fact that exciton with low dissociation
energy (dozen of meV) doesn’t withstand to radiation
defect local fields even at long distances.
If to compare luminescence spectra of two GaP
samples of different purity, one can see that the free
exciton lines and background replica in luminescence
spectra of more pure crystal are more intensive
(Fig. 5a,b). In the worse cleaned crystal, the exciton
concentration is low, and spectral lines are of low
resolution (Fig. 3), because impurities distort the
periodical field profile.
The same influence on exciton emission is inherent
to thermal defects appearing after high temperature
heating (>600 C). In irradiated samples, the effect is
stronger due to formation of radiation defect-impurity
complexes [24].
The near-edge absorption changes are the result of
appearance of the density-of-states tails, which distort
band edges; the effect is significant at high
concentrations of structural defects.
4. Conclusions
Photoluminescence spectra of GaP crystals undoped and
doped by Te, Zn, Mg and N were studied at 4.2 K.
The samples were prepared using different
technologies and emission spectra were analyzed as
dependent on the impurity content. In undoped n-type
GaP, two broad bands at hν1 = 2.28 eV and
hν2 = 2.224 eV are present. The first band is related with
an uncontrolled Sn impurity; the second one is the result
of superposition of lines corresponding to donor-
acceptor transitions between distant Sn–Zn pairs. The
low-energy maximum hν = 2.17 eV is formed by TO-
phonon reiteration of the main band maximum. The
absence of the fine structure in the spectra indicates a
high defect content in undoped GaP.
The band hν = 2.296 eV in Mg-doped GaP has
been identified as the electron transition on the 0.044 eV
level near the valence band top and is related with Mg
impurity.
In Zn-doped p-type GaP, the main Zn impurity
(Ev = 0.064-0.062 eV) responds to the hν = 2.280 eV
band maximum emission.
Green emission band in epitaxial GaP appears due
to the far lying NN-pair emission.
In emission spectra of GaP crystal grown by
solution-melting, the fine structure is observed: it
consists of lines of free excitons and excitons bounded
on a nitrogen atom and also its phonon reiteration.
Electron irradiation causes decrease of the
photoluminescence intensity. The lowest radiation
hardness is characteristic to the far lying NN-pair
emission (its intensity drops by the factor 10 for the
electron fluence 1014 cm–2).
Intensity restoring in the process of isochronous
heating occurs within 100-600 C range, and in the
highly pure crystal grown by solution-melting, a sharp
stage of the luminescence intensity increase is observed
at 400-600 C, followed at higher temperatures by
degradation of emission due to creation of high-
temperature thermal defects.
References
1. T. Endo, T. Nishimura, K. Nakakuki, M. Kitamura,
K. Sugijama, DLTS study for energy-broadening of
the defect level on introducing radiation damage in
GaP // Jpn. J. Appl. Phys. 27(11), p. 2107-2112
(1988).
2. T. Endo, E. Uchida, Y. Hirosaki, K. Sugijama,
Deep levels in non-doped and donor-doped GaP //
Jpn. J. Appl. Phys. 27(1), p. 153-154 (1988).
3. T. Endo, Y. Hirosaki, E. Uchida, H. Miyake,
K. Sugijama, Deep levels in electron-irradiated
GaP at 10 MeV // Jpn. J. Appl. Phys. 28(10),
p. 1864-1870 (1989).
4. M.A. Zaidi, M. Zazoui, J.C. Bourgoin, Defects in
electron irradiated n-type GaP // J. Appl. Phys.
74(8), p. 4948-4952 (1993).
5. K. Kuriuama, Y. Miyamoto, Redshift of the
longitudinal optical phonon in neutron irradiated
GaP // J. Appl. Phys. 85(7), p. 3499-3502 (1999).
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010. V. 13, N 1. P. 30-35.
© 2010, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
35
6. A.V. Gommonai, D.B. Goyer, O.O. Goushchaa,
Yu.M. Azhniuk, I.G. Megela, M. Kranjcec,
Radiative recombination in electron-irradiated GaP
crystals // J. Optoelectron. and Adv. Mater. 5(3),
p. 641-646 (2003).
7. M. Zafar Iqbal, N. Baber, M. Arhad, N. Zafar,
Sensitive thermometry using capacitance variation
of GaP LEDs // Solid-State Electronics 30(6),
p. 639-641 (1987).
8. I. Prochazka, K. Hamal, B. Sopko, J. Blazey,
D. Chren, Photon counting detector with
picosecond timing for X to visible range on the
basis of GaP // Nucl. Inst. and Meth. Phys. Res. A
568, p. 437-439 (2006).
9. M.M. Sobolev, V.G. Nikitin, High-temperature
diode formed by epitaxial GaP layers // Tech. Phys.
Lett. 24(5), p. 329-331 (1998).
10. A. Berg, P. Din, Light Emitting Diodes. Mir,
Moscow, 1979 (in Russian).
11. K. Zdansky, J. Zavadil, D. Nohavika, S. Kugler,
Degradation of commercial high-brightness GaP:N
green light emitting diodes // J. Appl. Phys. 82(12),
p. 7678-7684 (1998).
12. M.I. Natham, G. Burns // J. Phys. Rev. 12(9),
p. 125 (1963).
13. F. Williams // Phys. status solidi 25, p. 493 (1968).
14. D.I. Dean, Izoelectronic traps in semiconductors
(experimental) // J. Lumin.7, p. 51 (1973).
15. V.M. Andreev, L.M. Dolginov, D.N. Tretyakov,
Liquid Epitaxy in Technology of Semiconductor
Devices. Sovetskoe radio, Мoscow, 1975 (in
Russian).
16. G.A. Sukach, Radiation-induced transformation of
radiative exciton complexes bound to nitrogen in
GaP:N green light-emitting structures // J. Lumin.
85, p. 121-128 (1999).
17. D.G. Thomas, M.E. Gershenson, Bound exitons in
GaP // Phys. Rev. 131(5), p. 2397-2404 (1964).
18. M. Gal, Temperature modulated photoluminescence
of GaP:N // Phys. Rev. B 18(2), p. 803-808 (1978).
19. W. Lancerns, A. Wiersma, Optical dephasing and
exciton transfer of an impurity bound in
semiconductors. Proton-echo experiment on GaP:N
// Phys. Rev. B 32(12), p. 8108-8115 (1985).
20. G.A. Herrmannsfeldt, Yia-Chung Chang, High-
pressure studies of luminescence from GaP and
GaP:N diodes // Phys. Rev. B 34(8), pp.5373-5376
(1986).
21. V.S. Vavilov, Effect of Radiations on
Semiconductors. Mir, Moscow, 1963 (in Russian).
22. Q. Hong, K. Wu, X. Zhang, Study on the
luminescence of GaP:N under selective excitation
of exciton bound to NN1 centers // J. Lumin.
40&41, p. 487-488 (1988).
23. E.Yu. Brailovskii, N.I. Ostashko, V.P. Tartachnyk,
V.I. Shakhovtsov, Influence of point radiation
defects on near-edge optical absorption of GaP
crystals // Ukrainskii Fizicheskii Zhurnal 26(6),
p. 973-977 (1981), in Russian.
24. V.V. Volkov, V.Ja. Opilat, V.P. Tartachnyk,
I.I. Tychyna, Deep levels in the initial and exposed
to electrons beams gallium phosphide //
Vysokochistye veschestva 2, p. 60-63 (1989), in
Russian.
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| id | nasplib_isofts_kiev_ua-123456789-117739 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:52:09Z |
| publishDate | 2010 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Hontaruk, O. Konoreva, O. Litovchenko, P. Manzhara, V. Opilat, V. Pinkovska, M. Tartachnyk, V. 2017-05-26T14:38:56Z 2017-05-26T14:38:56Z 2010 Radiative recombination in initial and electron-irradiated GaP crystals / O. Hontaruk, O. Konoreva, P. Litovchenko, V. Manzhara, V. Opilat, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 30-35. — Бібліогр.: 24 назв. — англ. 1560-8034 PACS 29.40.-n, 85.30.-z, 85.60.Dw https://nasplib.isofts.kiev.ua/handle/123456789/117739 Photoluminescence of GaP crystals irradiated by 1 MeV electrons was studied
 at 4.2 K. Samples were prepared using various technologies and doped by Te, Zn, Mg
 and N. Emission spectra were analyzed as dependent on the impurity content. Found was the electron irradiation influence on the luminescence intensity and its mechanism.
 Radiative recombination intensity was shown to recover efficiently within the
 temperature range 200-600 ºC, and the main annealing stage being at 200-400 ºC. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Radiative recombination in initial and electron-irradiated GaP crystals Article published earlier |
| spellingShingle | Radiative recombination in initial and electron-irradiated GaP crystals Hontaruk, O. Konoreva, O. Litovchenko, P. Manzhara, V. Opilat, V. Pinkovska, M. Tartachnyk, V. |
| title | Radiative recombination in initial and electron-irradiated GaP crystals |
| title_full | Radiative recombination in initial and electron-irradiated GaP crystals |
| title_fullStr | Radiative recombination in initial and electron-irradiated GaP crystals |
| title_full_unstemmed | Radiative recombination in initial and electron-irradiated GaP crystals |
| title_short | Radiative recombination in initial and electron-irradiated GaP crystals |
| title_sort | radiative recombination in initial and electron-irradiated gap crystals |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117739 |
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