Radiative recombination in initial and electron-irradiated GaP crystals
Photoluminescence of GaP crystals irradiated by 1 MeV electrons was studied
 at 4.2 K. Samples were prepared using various technologies and doped by Te, Zn, Mg
 and N. Emission spectra were analyzed as dependent on the impurity content. Found was the electron irradiation influence on...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2010 |
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117739 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Radiative recombination in initial and electron-irradiated GaP crystals / O. Hontaruk, O. Konoreva, P. Litovchenko, V. Manzhara, V. Opilat, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 30-35. — Бібліогр.: 24 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862704607051907072 |
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| author | Hontaruk, O. Konoreva, O. Litovchenko, P. Manzhara, V. Opilat, V. Pinkovska, M. Tartachnyk, V. |
| author_facet | Hontaruk, O. Konoreva, O. Litovchenko, P. Manzhara, V. Opilat, V. Pinkovska, M. Tartachnyk, V. |
| citation_txt | Radiative recombination in initial and electron-irradiated GaP crystals / O. Hontaruk, O. Konoreva, P. Litovchenko, V. Manzhara, V. Opilat, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 30-35. — Бібліогр.: 24 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Photoluminescence of GaP crystals irradiated by 1 MeV electrons was studied
at 4.2 K. Samples were prepared using various technologies and doped by Te, Zn, Mg
and N. Emission spectra were analyzed as dependent on the impurity content. Found was the electron irradiation influence on the luminescence intensity and its mechanism.
Radiative recombination intensity was shown to recover efficiently within the
temperature range 200-600 ºC, and the main annealing stage being at 200-400 ºC.
|
| first_indexed | 2025-12-07T16:52:09Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117739 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:52:09Z |
| publishDate | 2010 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Hontaruk, O. Konoreva, O. Litovchenko, P. Manzhara, V. Opilat, V. Pinkovska, M. Tartachnyk, V. 2017-05-26T14:38:56Z 2017-05-26T14:38:56Z 2010 Radiative recombination in initial and electron-irradiated GaP crystals / O. Hontaruk, O. Konoreva, P. Litovchenko, V. Manzhara, V. Opilat, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 30-35. — Бібліогр.: 24 назв. — англ. 1560-8034 PACS 29.40.-n, 85.30.-z, 85.60.Dw https://nasplib.isofts.kiev.ua/handle/123456789/117739 Photoluminescence of GaP crystals irradiated by 1 MeV electrons was studied
 at 4.2 K. Samples were prepared using various technologies and doped by Te, Zn, Mg
 and N. Emission spectra were analyzed as dependent on the impurity content. Found was the electron irradiation influence on the luminescence intensity and its mechanism.
 Radiative recombination intensity was shown to recover efficiently within the
 temperature range 200-600 ºC, and the main annealing stage being at 200-400 ºC. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Radiative recombination in initial and electron-irradiated GaP crystals Article published earlier |
| spellingShingle | Radiative recombination in initial and electron-irradiated GaP crystals Hontaruk, O. Konoreva, O. Litovchenko, P. Manzhara, V. Opilat, V. Pinkovska, M. Tartachnyk, V. |
| title | Radiative recombination in initial and electron-irradiated GaP crystals |
| title_full | Radiative recombination in initial and electron-irradiated GaP crystals |
| title_fullStr | Radiative recombination in initial and electron-irradiated GaP crystals |
| title_full_unstemmed | Radiative recombination in initial and electron-irradiated GaP crystals |
| title_short | Radiative recombination in initial and electron-irradiated GaP crystals |
| title_sort | radiative recombination in initial and electron-irradiated gap crystals |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117739 |
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