Electron-hole Fermi liquid in nanosized semiconductor structures

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2010
• Hauptverfasser: Litovchenko, V.G., Grygoriev, A.A.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117740
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Electron-hole Fermi liquid in nanosized semiconductor structures / V.G. Litovchenko, A.A. Grygoriev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 51-57. — Бібліогр.: 22 назв. — англ.

The experimental and theoretical results on the quantum-sized electron-hole liquid plasma (EHLP) in semiconductors and analysis of the difference of it in comparison to the bulk one have been presented. The non-equilibrium Fermi EHLP can be created in the bulk and layered structures (insulator-semiconductor interfaces, thin films, quantum superlattices, etc.) at low temperatures and powerful laser radiation. In the quantum-sized structures, however, these phenomena appear at much higher temperatures, up to the room ones. The peculiarities of EHLP phenomena are: (1) appearance the very broad luminescence line in the low-energy side of its spectrum, which have constant width and energy position under variation of the light intensity as well as narrowing peak when increasing the temperature; (2) appearance of stimulated radiation with a relatively low excitation threshold (the so-called “surface laser effect”); (3) planar ballistic expansion of electron-hole plasma over long distances; (4) predicted effect of transformation of non-equilibrium 2D plasmons into radiative modes.