Electron-hole Fermi liquid in nanosized semiconductor structures

The experimental and theoretical results on the quantum-sized electron-hole
 liquid plasma (EHLP) in semiconductors and analysis of the difference of it in
 comparison to the bulk one have been presented. The non-equilibrium Fermi EHLP can
 be created in the bulk and layered...

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Бібліографічні деталі
Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2010
Автори: Litovchenko, V.G., Grygoriev, A.A.
Формат: Стаття
Мова:Англійська
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/117740
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Electron-hole Fermi liquid in nanosized semiconductor structures / V.G. Litovchenko, A.A. Grygoriev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 51-57. — Бібліогр.: 22 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Litovchenko, V.G.
Grygoriev, A.A.
author_facet Litovchenko, V.G.
Grygoriev, A.A.
citation_txt Electron-hole Fermi liquid in nanosized semiconductor structures / V.G. Litovchenko, A.A. Grygoriev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 51-57. — Бібліогр.: 22 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description The experimental and theoretical results on the quantum-sized electron-hole
 liquid plasma (EHLP) in semiconductors and analysis of the difference of it in
 comparison to the bulk one have been presented. The non-equilibrium Fermi EHLP can
 be created in the bulk and layered structures (insulator-semiconductor interfaces, thin
 films, quantum superlattices, etc.) at low temperatures and powerful laser radiation. In
 the quantum-sized structures, however, these phenomena appear at much higher
 temperatures, up to the room ones. The peculiarities of EHLP phenomena are:
 (1) appearance the very broad luminescence line in the low-energy side of its spectrum,
 which have constant width and energy position under variation of the light intensity as
 well as narrowing peak when increasing the temperature; (2) appearance of stimulated
 radiation with a relatively low excitation threshold (the so-called “surface laser effect”);
 (3) planar ballistic expansion of electron-hole plasma over long distances; (4) predicted
 effect of transformation of non-equilibrium 2D plasmons into radiative modes.
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language English
last_indexed 2025-12-07T17:18:00Z
publishDate 2010
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Litovchenko, V.G.
Grygoriev, A.A.
2017-05-26T14:39:49Z
2017-05-26T14:39:49Z
2010
Electron-hole Fermi liquid in nanosized semiconductor structures / V.G. Litovchenko, A.A. Grygoriev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 51-57. — Бібліогр.: 22 назв. — англ.
1560-8034
PACS 71.10.A, Ca; 71.35.Ee
https://nasplib.isofts.kiev.ua/handle/123456789/117740
The experimental and theoretical results on the quantum-sized electron-hole
 liquid plasma (EHLP) in semiconductors and analysis of the difference of it in
 comparison to the bulk one have been presented. The non-equilibrium Fermi EHLP can
 be created in the bulk and layered structures (insulator-semiconductor interfaces, thin
 films, quantum superlattices, etc.) at low temperatures and powerful laser radiation. In
 the quantum-sized structures, however, these phenomena appear at much higher
 temperatures, up to the room ones. The peculiarities of EHLP phenomena are:
 (1) appearance the very broad luminescence line in the low-energy side of its spectrum,
 which have constant width and energy position under variation of the light intensity as
 well as narrowing peak when increasing the temperature; (2) appearance of stimulated
 radiation with a relatively low excitation threshold (the so-called “surface laser effect”);
 (3) planar ballistic expansion of electron-hole plasma over long distances; (4) predicted
 effect of transformation of non-equilibrium 2D plasmons into radiative modes.
This work was partially done in the frame of Project
 NanoPhysics, NAS of Ukraine and Project М/175-2007.
 We are thankful to Prof. D.V. Korbutyak, Prof.
 S.V. Krylyuk and Prof. V.I. Sugakov for discussions
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Electron-hole Fermi liquid in nanosized semiconductor structures
Article
published earlier
spellingShingle Electron-hole Fermi liquid in nanosized semiconductor structures
Litovchenko, V.G.
Grygoriev, A.A.
title Electron-hole Fermi liquid in nanosized semiconductor structures
title_full Electron-hole Fermi liquid in nanosized semiconductor structures
title_fullStr Electron-hole Fermi liquid in nanosized semiconductor structures
title_full_unstemmed Electron-hole Fermi liquid in nanosized semiconductor structures
title_short Electron-hole Fermi liquid in nanosized semiconductor structures
title_sort electron-hole fermi liquid in nanosized semiconductor structures
url https://nasplib.isofts.kiev.ua/handle/123456789/117740
work_keys_str_mv AT litovchenkovg electronholefermiliquidinnanosizedsemiconductorstructures
AT grygorievaa electronholefermiliquidinnanosizedsemiconductorstructures