Electron-hole Fermi liquid in nanosized semiconductor structures
The experimental and theoretical results on the quantum-sized electron-hole
 liquid plasma (EHLP) in semiconductors and analysis of the difference of it in
 comparison to the bulk one have been presented. The non-equilibrium Fermi EHLP can
 be created in the bulk and layered...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2010 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117740 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Electron-hole Fermi liquid in nanosized semiconductor structures / V.G. Litovchenko, A.A. Grygoriev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 51-57. — Бібліогр.: 22 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862709481944645632 |
|---|---|
| author | Litovchenko, V.G. Grygoriev, A.A. |
| author_facet | Litovchenko, V.G. Grygoriev, A.A. |
| citation_txt | Electron-hole Fermi liquid in nanosized semiconductor structures / V.G. Litovchenko, A.A. Grygoriev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 51-57. — Бібліогр.: 22 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The experimental and theoretical results on the quantum-sized electron-hole
liquid plasma (EHLP) in semiconductors and analysis of the difference of it in
comparison to the bulk one have been presented. The non-equilibrium Fermi EHLP can
be created in the bulk and layered structures (insulator-semiconductor interfaces, thin
films, quantum superlattices, etc.) at low temperatures and powerful laser radiation. In
the quantum-sized structures, however, these phenomena appear at much higher
temperatures, up to the room ones. The peculiarities of EHLP phenomena are:
(1) appearance the very broad luminescence line in the low-energy side of its spectrum,
which have constant width and energy position under variation of the light intensity as
well as narrowing peak when increasing the temperature; (2) appearance of stimulated
radiation with a relatively low excitation threshold (the so-called “surface laser effect”);
(3) planar ballistic expansion of electron-hole plasma over long distances; (4) predicted
effect of transformation of non-equilibrium 2D plasmons into radiative modes.
|
| first_indexed | 2025-12-07T17:18:00Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117740 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:18:00Z |
| publishDate | 2010 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Litovchenko, V.G. Grygoriev, A.A. 2017-05-26T14:39:49Z 2017-05-26T14:39:49Z 2010 Electron-hole Fermi liquid in nanosized semiconductor structures / V.G. Litovchenko, A.A. Grygoriev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 51-57. — Бібліогр.: 22 назв. — англ. 1560-8034 PACS 71.10.A, Ca; 71.35.Ee https://nasplib.isofts.kiev.ua/handle/123456789/117740 The experimental and theoretical results on the quantum-sized electron-hole
 liquid plasma (EHLP) in semiconductors and analysis of the difference of it in
 comparison to the bulk one have been presented. The non-equilibrium Fermi EHLP can
 be created in the bulk and layered structures (insulator-semiconductor interfaces, thin
 films, quantum superlattices, etc.) at low temperatures and powerful laser radiation. In
 the quantum-sized structures, however, these phenomena appear at much higher
 temperatures, up to the room ones. The peculiarities of EHLP phenomena are:
 (1) appearance the very broad luminescence line in the low-energy side of its spectrum,
 which have constant width and energy position under variation of the light intensity as
 well as narrowing peak when increasing the temperature; (2) appearance of stimulated
 radiation with a relatively low excitation threshold (the so-called “surface laser effect”);
 (3) planar ballistic expansion of electron-hole plasma over long distances; (4) predicted
 effect of transformation of non-equilibrium 2D plasmons into radiative modes. This work was partially done in the frame of Project
 NanoPhysics, NAS of Ukraine and Project М/175-2007.
 We are thankful to Prof. D.V. Korbutyak, Prof.
 S.V. Krylyuk and Prof. V.I. Sugakov for discussions en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Electron-hole Fermi liquid in nanosized semiconductor structures Article published earlier |
| spellingShingle | Electron-hole Fermi liquid in nanosized semiconductor structures Litovchenko, V.G. Grygoriev, A.A. |
| title | Electron-hole Fermi liquid in nanosized semiconductor structures |
| title_full | Electron-hole Fermi liquid in nanosized semiconductor structures |
| title_fullStr | Electron-hole Fermi liquid in nanosized semiconductor structures |
| title_full_unstemmed | Electron-hole Fermi liquid in nanosized semiconductor structures |
| title_short | Electron-hole Fermi liquid in nanosized semiconductor structures |
| title_sort | electron-hole fermi liquid in nanosized semiconductor structures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117740 |
| work_keys_str_mv | AT litovchenkovg electronholefermiliquidinnanosizedsemiconductorstructures AT grygorievaa electronholefermiliquidinnanosizedsemiconductorstructures |