Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties
The results of structural investigations and electric field-induced properties of
 thin (40–100 nm) Li-Bi-Se films grown on glass substrates by means of the resistive
 evaporation technique are reported. The experimental investigations of microstructure
 and phase composition...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2010 |
| ISSN: | 1560-8034 |
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117743 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties / V.I. Bilozertseva, H.M. Khlyap, P.S. Shkumbatyuk, N.L. Dyakonenko, A.O. Mamaluy, D.O. Gaman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 61-64. — Бібліогр.: 12 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The results of structural investigations and electric field-induced properties of
thin (40–100 nm) Li-Bi-Se films grown on glass substrates by means of the resistive
evaporation technique are reported. The experimental investigations of microstructure
and phase composition of thin films by transmission electron microscopy (TEM) and
electron diffraction methods are carried out. Тhe experimental current-voltage
dependences and transport of charge carriers are discussed.
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| ISSN: | 1560-8034 |