Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties
The results of structural investigations and electric field-induced properties of
 thin (40–100 nm) Li-Bi-Se films grown on glass substrates by means of the resistive
 evaporation technique are reported. The experimental investigations of microstructure
 and phase composition...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2010 |
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117743 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties / V.I. Bilozertseva, H.M. Khlyap, P.S. Shkumbatyuk, N.L. Dyakonenko, A.O. Mamaluy, D.O. Gaman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 61-64. — Бібліогр.: 12 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862599073175961600 |
|---|---|
| author | Bilozertseva, V.I. Khlyap, H.M. Shkumbatyuk, P.S. Dyakonenko, N.L. Mamaluy, A.O. Gaman, D.O. |
| author_facet | Bilozertseva, V.I. Khlyap, H.M. Shkumbatyuk, P.S. Dyakonenko, N.L. Mamaluy, A.O. Gaman, D.O. |
| citation_txt | Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties / V.I. Bilozertseva, H.M. Khlyap, P.S. Shkumbatyuk, N.L. Dyakonenko, A.O. Mamaluy, D.O. Gaman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 61-64. — Бібліогр.: 12 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The results of structural investigations and electric field-induced properties of
thin (40–100 nm) Li-Bi-Se films grown on glass substrates by means of the resistive
evaporation technique are reported. The experimental investigations of microstructure
and phase composition of thin films by transmission electron microscopy (TEM) and
electron diffraction methods are carried out. Тhe experimental current-voltage
dependences and transport of charge carriers are discussed.
|
| first_indexed | 2025-11-27T21:18:41Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117743 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-27T21:18:41Z |
| publishDate | 2010 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Bilozertseva, V.I. Khlyap, H.M. Shkumbatyuk, P.S. Dyakonenko, N.L. Mamaluy, A.O. Gaman, D.O. 2017-05-26T15:02:43Z 2017-05-26T15:02:43Z 2010 Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties / V.I. Bilozertseva, H.M. Khlyap, P.S. Shkumbatyuk, N.L. Dyakonenko, A.O. Mamaluy, D.O. Gaman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 61-64. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS 61.46.-w, 73.63.-b https://nasplib.isofts.kiev.ua/handle/123456789/117743 The results of structural investigations and electric field-induced properties of
 thin (40–100 nm) Li-Bi-Se films grown on glass substrates by means of the resistive
 evaporation technique are reported. The experimental investigations of microstructure
 and phase composition of thin films by transmission electron microscopy (TEM) and
 electron diffraction methods are carried out. Тhe experimental current-voltage
 dependences and transport of charge carriers are discussed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties Article published earlier |
| spellingShingle | Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties Bilozertseva, V.I. Khlyap, H.M. Shkumbatyuk, P.S. Dyakonenko, N.L. Mamaluy, A.O. Gaman, D.O. |
| title | Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties |
| title_full | Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties |
| title_fullStr | Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties |
| title_full_unstemmed | Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties |
| title_short | Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties |
| title_sort | li-bi-se semiconductor thin films: technology, structure and electrophysical properties |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117743 |
| work_keys_str_mv | AT bilozertsevavi libisesemiconductorthinfilmstechnologystructureandelectrophysicalproperties AT khlyaphm libisesemiconductorthinfilmstechnologystructureandelectrophysicalproperties AT shkumbatyukps libisesemiconductorthinfilmstechnologystructureandelectrophysicalproperties AT dyakonenkonl libisesemiconductorthinfilmstechnologystructureandelectrophysicalproperties AT mamaluyao libisesemiconductorthinfilmstechnologystructureandelectrophysicalproperties AT gamando libisesemiconductorthinfilmstechnologystructureandelectrophysicalproperties |