Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2010
• Hauptverfasser: Bilozertseva, V.I., Khlyap, H.M., Shkumbatyuk, P.S., Dyakonenko, N.L., Mamaluy, A.O., Gaman, D.O.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117743
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties / V.I. Bilozertseva, H.M. Khlyap, P.S. Shkumbatyuk, N.L. Dyakonenko, A.O. Mamaluy, D.O. Gaman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 61-64. — Бібліогр.: 12 назв. — англ.

The results of structural investigations and electric field-induced properties of
 thin (40–100 nm) Li-Bi-Se films grown on glass substrates by means of the resistive
 evaporation technique are reported. The experimental investigations of microstructure
 and phase composition...