Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing
The type, density, and distribution of defects in initial and oxidated
 monocrystalline silicon wafers were studied by modern methods. It was established that
 disordered silicon and stacking faults are basic defects in near-surface layers of oxidated
 monocrystalline silicon...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2010 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117746 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing/ V.A. Smyntyna and O.V. Sviridova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 74-78. — Бібліогр.: 17 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862692482478768128 |
|---|---|
| author | Smyntyna, V.A. Sviridova, O.V. |
| author_facet | Smyntyna, V.A. Sviridova, O.V. |
| citation_txt | Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing/ V.A. Smyntyna and O.V. Sviridova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 74-78. — Бібліогр.: 17 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The type, density, and distribution of defects in initial and oxidated
monocrystalline silicon wafers were studied by modern methods. It was established that
disordered silicon and stacking faults are basic defects in near-surface layers of oxidated
monocrystalline silicon. It was shown that stacking faults are generated during the
oxidation process, and the mechanism of their formation is connected with the defective
layered structure of initial silicon wafers. It was established that defects of layered
heterogeneity, on the one hand, lead to the formation of stacking faults and, on the other
hand, prevent their propagation to the wafer bulk.
|
| first_indexed | 2025-12-07T16:17:53Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117746 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:17:53Z |
| publishDate | 2010 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Smyntyna, V.A. Sviridova, O.V. 2017-05-26T15:40:24Z 2017-05-26T15:40:24Z 2010 Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing/ V.A. Smyntyna and O.V. Sviridova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 74-78. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS 61.72.Nn https://nasplib.isofts.kiev.ua/handle/123456789/117746 The type, density, and distribution of defects in initial and oxidated
 monocrystalline silicon wafers were studied by modern methods. It was established that
 disordered silicon and stacking faults are basic defects in near-surface layers of oxidated
 monocrystalline silicon. It was shown that stacking faults are generated during the
 oxidation process, and the mechanism of their formation is connected with the defective
 layered structure of initial silicon wafers. It was established that defects of layered
 heterogeneity, on the one hand, lead to the formation of stacking faults and, on the other
 hand, prevent their propagation to the wafer bulk. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing Article published earlier |
| spellingShingle | Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing Smyntyna, V.A. Sviridova, O.V. |
| title | Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing |
| title_full | Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing |
| title_fullStr | Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing |
| title_full_unstemmed | Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing |
| title_short | Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing |
| title_sort | genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117746 |
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