Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing
The type, density, and distribution of defects in initial and oxidated
 monocrystalline silicon wafers were studied by modern methods. It was established that
 disordered silicon and stacking faults are basic defects in near-surface layers of oxidated
 monocrystalline silicon...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2010 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117746 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing/ V.A. Smyntyna and O.V. Sviridova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 74-78. — Бібліогр.: 17 назв. — англ. |