Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2010
• Hauptverfasser: Smyntyna, V.A., Sviridova, O.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117746
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing/ V.A. Smyntyna and O.V. Sviridova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 74-78. — Бібліогр.: 17 назв. — англ.

The type, density, and distribution of defects in initial and oxidated
 monocrystalline silicon wafers were studied by modern methods. It was established that
 disordered silicon and stacking faults are basic defects in near-surface layers of oxidated
 monocrystalline silicon...